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DTA114WE

Description
-100mA / -50V Digital transistors (with built-in resistors)
CategoryDiscrete semiconductor    The transistor   
File Size136KB,3 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance
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DTA114WE Overview

-100mA / -50V Digital transistors (with built-in resistors)

DTA114WE Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerROHM Semiconductor
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresDIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 0.47
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)24
JESD-30 codeR-PDSO-G3
JESD-609 codee1
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typePNP
Maximum power dissipation(Abs)0.15 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Silver/Copper (Sn/Ag/Cu)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature10
transistor applicationsSWITCHING
Transistor component materialsSILICON
-100mA / -50V Digital transistors
(with built-in resistors)
DTA114WE / DTA114WUA / DTA114WKA
Applications
Inverter, Interface, Driver
Features
1)Built-in bias resistors enable the configuration of an inverter
circuit without connecting external input resistors.
2)The bias resistors consist of thin-film resistors with complete
isolation to allow positive biasing of the input, and parasitic
effects are almost completely eliminated.
3)Only the on / off conditions need to be set for operation,
making the device design easy.
4)Higher mounting densities can be achieved.
Structure
PNP epitaxial planar silicon transistor (Resistor built-in type)
Packaging specifications
Package
Packaging type
Code
Part No.
Dimensions
(Unit : mm)
EMT3
(SC-75A)
<SOT-416>
1.6
0.3
(3)
0.8
1.6
0.7
0.55
0.2
0.5 0.5
(1) GND
(2) IN
(3) OUT
0.2
0.15
1.0
Each lead has same dimensions
Abbreviated symbol : 74
UMT3
<SC-70>
2.0
0.3
(3)
0.9
0.2
0.7
1.25
(2)
(1)
2.1
0.1Min.
(2)
(1)
EMT3 UMT3 SMT3
Taping Taping Taping
TL
3000
T106
3000
T146
3000
(1) GND
(2) IN
(3) OUT
0.65 0.65
1.3
0.15
Each lead has same dimensions
Basic ordering unit (pieces)
Abbreviated symbol : 74
DTA114WE
DTA114WUA
DTA114WKA
SMT3
<SC-59>
(3)
2.9
0.4
1.1
0.8
(2)
(1)
1.6
2.8
Inner circuit
IN
R
1
R
2
OUT
(1) GND
(2) IN
(3) OUT
0.95 0.95
0.15
1.9
Each lead has same dimensions
GND(+)
IN
GND(+)
OUT
Abbreviated symbol : 74
R
1
=10kΩ, R
2
=4.7kΩ
www.rohm.com
c
2009 ROHM Co., Ltd. All rights reserved.
0.3Min.
1/2
0.1Min.
2009.06 - Rev.C

DTA114WE Related Products

DTA114WE DTA114WKA DTA114WE_09 DTA114WUA
Description -100mA / -50V Digital transistors (with built-in resistors) -100mA / -50V Digital transistors (with built-in resistors) -100mA / -50V Digital transistors (with built-in resistors) -100mA / -50V Digital transistors (with built-in resistors)
Is it lead-free? Lead free Lead free - Lead free
Is it Rohs certified? conform to conform to - conform to
Maker ROHM Semiconductor ROHM Semiconductor - ROHM Semiconductor
package instruction SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 - SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code compli compliant - compli
ECCN code EAR99 EAR99 - EAR99
Other features DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 0.47 DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 0.47 - DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 0.47
Maximum collector current (IC) 0.1 A 0.1 A - 0.1 A
Collector-emitter maximum voltage 50 V 50 V - 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR - SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE) 24 24 - 24
JESD-30 code R-PDSO-G3 R-PDSO-G3 - R-PDSO-G3
JESD-609 code e1 e1 - e1
Number of components 1 1 - 1
Number of terminals 3 3 - 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR - RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE - SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260 - 260
Polarity/channel type PNP PNP - PNP
Maximum power dissipation(Abs) 0.15 W 0.2 W - 0.2 W
Certification status Not Qualified Not Qualified - Not Qualified
surface mount YES YES - YES
Terminal surface Tin/Silver/Copper (Sn/Ag/Cu) Tin/Silver/Copper (Sn/Ag/Cu) - Tin/Silver/Copper (Sn/Ag/Cu)
Terminal form GULL WING GULL WING - GULL WING
Terminal location DUAL DUAL - DUAL
Maximum time at peak reflow temperature 10 10 - 10
transistor applications SWITCHING SWITCHING - SWITCHING
Transistor component materials SILICON SILICON - SILICON
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