KTA1242D-Y datasheet, PDF - EEWORLD Datasheet

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KTA1242D-Y: DescriptionSmall Signal Bipolar Transistor, 5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, DPAK-3; CategoryDiscrete semiconductor The transistor; File Size395KB，2 Pages; ManufacturerKEC; Websitehttp://www.keccorp.com/

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KTA1242D-Y Overview

Small Signal Bipolar Transistor, 5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, DPAK-3

KTA1242D-Y Parametric

Parameter Name	Attribute value
Maker	KEC
package instruction	SMALL OUTLINE, R-PSSO-G2
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum collector current (IC)	5 A
Collector-emitter maximum voltage	20 V
Configuration	SINGLE
Minimum DC current gain (hFE)	160
JESD-30 code	R-PSSO-G2
Number of components	1
Number of terminals	2
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	PNP
Maximum power dissipation(Abs)	1.3 W
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	SINGLE
Transistor component materials	SILICON
Nominal transition frequency (fT)	170 MHz

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SEMICONDUCTOR

TECHNICAL DATA

STROBO FLASH APPLICATION.

HIGH CURRENT APPLICATION.

A

KTA1242D/L

EPITAXIAL PLANAR PNP TRANSISTOR

I

J

FEATURES

h

FE

=100 320 (V

CE

=-2V, I

C

=-0.5A).

Low Collector Saturation Voltage.

: V

CE(sat)

=-0.5V (I

C

=-3A, I

B

=-75mA).

Q

C

H

P

F

1

2

F

3

L

MAXIMUM RATING (Ta=25

CHARACTERISTIC

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltag

Collector Current

Base Current

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

)

SYMBOL

V

CBO

V

CEO

V

EBO

I

C

I

B

P

C

T

j

T

stg

RATING

-35

-20

-8

-5

-0.5

1.0

150

-55 150

Q

UNIT

V

A

W

A

C

I

J

DIM

A

B

C

D

E

F

H

I

J

K

L

M

O

P

Q

MILLIMETERS

_

6.60 + 0.2

_

6.10 + 0.2

_

5.0 + 0.2

_

1.10 + 0.2

_

2.70 + 0.2

_

2.30 + 0.1

1.00 MAX

_

2.30 + 0.2

_

0.5 + 0.1

_

2.00 + 0.20

_

0.50 + 0.10

_

0.91+ 0.10

_

0.90 + 0.1

_

1.00 + 0.10

0.95 MAX

B

K

E

M

D

1. BASE

2. COLLECTOR

3. EMITTER

DPAK

D

O

H

G

P

F

L

1

2

3

DIM

A

B

C

D

E

F

G

H

I

J

K

L

P

Q

MILLIMETERS

_

6.60

+

0.2

_

6.10

+

0.2

_

5.0

+

0.2

_

1.10

+

0.2

_

9.50

+

0.6

_

2.30

+

0.1

_

0.76

+

0.1

1.0 MAX

_

2.30

+

0.2

_

0.5

+

0.1

_

2.0

+

0.2

_

0.50

+

0.1

_

1.0

+

0.1

0.90 MAX

K

1. BASE

2. COLLECTOR

3. EMITTER

E

B

ELECTRICAL CHARACTERISTICS (Ta=25 )

CHARACTERISTIC

Collector Cut-off Current

Emitter Cut-off Current

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter Voltage

Transition Frequency

Collector Output Capacitance

Note : h

FE

(1) Classification O:100~200, Y:160~320

SYMBOL

I

CBO

I

EBO

V

(BR)CEO

V

(BR)EBO

h

FE

(1) (Note)

h

FE

(2)

V

CE(sat)

V

BE

f

T

C

ob

TEST CONDITION

V

CB

=-35V, I

E

=0

V

EB

=-8V, I

C

=0

I

C

=-10mA, I

B

=0

I

E

=-1mA, I

C

=0

V

CE

=-2V, I

C

=-0.5A

V

CE

=-2V, I

C

=-4A

I

C

=-3A, I

B

=-75mA

V

CE

=-2V, I

C

=-4A

V

CE

=-2V, I

C

=-0.5A

V

CB

=-10V, I

E

=0, f=1MHz

MIN.

-

-20

-8

100

70

-

IPAK

TYP.

-

170

62

MAX.

-100

-

320

-

-0.5

-1.5

-

UNIT

nA

V

MHz

pF

2003. 3. 27

Revision No : 4

1/2

KTA1242D-Y Related Products

	KTA1242D-Y	KTA1242D-O	KTA1242L-O	KTA1242L-Y
Description	Small Signal Bipolar Transistor, 5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, DPAK-3	Small Signal Bipolar Transistor, 5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, DPAK-3	Small Signal Bipolar Transistor, 5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, IPAK-3	Small Signal Bipolar Transistor, 5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, IPAK-3
Maker	KEC	KEC	KEC	KEC
package instruction	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	IN-LINE, R-PSIP-T3	IN-LINE, R-PSIP-T3
Contacts	3	3	3	3
Reach Compliance Code	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99
Maximum collector current (IC)	5 A	5 A	5 A	5 A
Collector-emitter maximum voltage	20 V	20 V	20 V	20 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	160	100	100	160
JESD-30 code	R-PSSO-G2	R-PSSO-G2	R-PSIP-T3	R-PSIP-T3
Number of components	1	1	1	1
Number of terminals	2	2	3	3
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	IN-LINE	IN-LINE
Polarity/channel type	PNP	PNP	PNP	PNP
Maximum power dissipation(Abs)	1.3 W	1.3 W	1.3 W	1.3 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	NO	NO
Terminal form	GULL WING	GULL WING	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	170 MHz	170 MHz	170 MHz	170 MHz

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Shortcut: 00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W

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