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JANTXV2N3250A

Description
Small Signal Bipolar Transistor, 0.2A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-205AD, TO-18, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size54KB,2 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
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JANTXV2N3250A Overview

Small Signal Bipolar Transistor, 0.2A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-205AD, TO-18, 3 PIN

JANTXV2N3250A Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
Objectid2078586558
Parts packaging codeBCY
package instructionTO-18, 3 PIN
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)0.2 A
Collector-emitter maximum voltage60 V
ConfigurationSINGLE
Minimum DC current gain (hFE)45
JEDEC-95 codeTO-205AD
JESD-30 codeO-MBCY-W3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature175 °C
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typePNP
Maximum power dissipation(Abs)1.2 W
Certification statusQualified
GuidelineMIL-19500/323H
surface mountNO
Terminal surfaceTIN LEAD
Terminal formWIRE
Terminal locationBOTTOM
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)250 MHz
Maximum off time (toff)250 ns
Maximum opening time (tons)70 ns
TECHNICAL DATA
PNP SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/323
Devices
2N3250A
2N3251A
Qualified Level
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation @ T
A
= +25
0
C
(1)
@ T
C
= +25
0
C
(2)
Operating & Storage Junction Temperature Range
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
T
T
J
,
T
stg
Symbol
(1)(2)
R
θ
JA
Value
60
60
5.0
200
0.36
1.2
-65 to +175
Max.
417
Units
Vdc
Vdc
Vdc
mAdc
W
W
0
C
Unit
C/W
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Ambient
1) Derate linearly 2.4 W/
0
C for T
A
> +25
0
C
2) Derate linearly 8.0 W/
0
C for T
C
> +25
0
C
0
TO-39*
(TO-205AD)
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (T
A
= 25
0
C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I
C
= 10 mAdc
Collector-Emitter Cutoff Voltage
V
BE
= 3.0 Vdc, V
CE
= 40 Vdc
Collector-Base Cutoff Current
V
CB
= 60 Vdc
V
CB
= 40 Vdc
Emitter-Base Cutoff Current
V
EB
= 5.0 Vdc
Collector-Emitter Cutoff Voltage
V
BE
= 3.0 Vdc, V
CE
= 40 Vdc
V
(BR)
CEO
I
CEX
I
CBO
I
EBO
I
CEX
60
20
10
20
10
50
Vdc
ηAdc
µAdc
ηAdc
µAdc
ηAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2

JANTXV2N3250A Related Products

JANTXV2N3250A JANTXV2N3251A
Description Small Signal Bipolar Transistor, 0.2A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-205AD, TO-18, 3 PIN Small Signal Bipolar Transistor, 0.2A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-205AD, TO-18, 3 PIN
Is it lead-free? Contains lead Contains lead
Is it Rohs certified? incompatible incompatible
Objectid 2078586558 2078586561
Parts packaging code BCY BCY
package instruction TO-18, 3 PIN TO-18, 3 PIN
Contacts 3 3
Reach Compliance Code unknown unknown
ECCN code EAR99 EAR99
Shell connection COLLECTOR COLLECTOR
Maximum collector current (IC) 0.2 A 0.2 A
Collector-emitter maximum voltage 60 V 60 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 45 90
JEDEC-95 code TO-205AD TO-205AD
JESD-30 code O-MBCY-W3 O-MBCY-W3
JESD-609 code e0 e0
Number of components 1 1
Number of terminals 3 3
Maximum operating temperature 175 °C 175 °C
Package body material METAL METAL
Package shape ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL
Polarity/channel type PNP PNP
Maximum power dissipation(Abs) 1.2 W 1.2 W
Certification status Qualified Not Qualified
Guideline MIL-19500/323H MIL-19500/323H
surface mount NO NO
Terminal surface TIN LEAD TIN LEAD
Terminal form WIRE WIRE
Terminal location BOTTOM BOTTOM
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 250 MHz 300 MHz
Maximum off time (toff) 250 ns 300 ns
Maximum opening time (tons) 70 ns 70 ns
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