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TT8U1_09

Description
1.5V Drive Pch +SBD MOSFET
File Size226KB,6 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
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TT8U1_09 Overview

1.5V Drive Pch +SBD MOSFET

1.5V Drive Pch +SBD MOSFET
TT8U1
Structure
Silicon P-channel MOSFET / schottky barrier diode
Dimensions
(Unit : mm)
TSST8
(8)
(7)
(6)
(5)
Features
1) Low On-resistance.
2) High Power Package.
3) Low voltage drive. (1.5V)
(1)
(2)
(3)
(4)
Abbreviated symbol : U01
Each lead has same dimensions
Applications
Switching
Inner circuit
Packaging specifications
Package
Type
TT8U1
Code
Basic ordering unit (pieces)
Taping
TR
3000
∗1
(1) Anode
(2) Anode
(3) Source
(4) Gate
(5) Drain
(6) Drain
(7) Cathode
(8) Cathode
(8)
(7)
(6)
(5)
(1)
(2)
(3)
(4)
Absolute maximum ratings
(Ta=25°C)
<MOSFET>
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Channel temperature
Power dissipation
∗1
Pw≤10µs, Duty cycle≤1%
∗2
Mounted on a ceramic board
∗1
BODY DIODE
Continuous
Pulsed
Continuous
Pulsed
Symbol
V
DSS
V
GSS
I
D
I
DP
∗1
I
S
I
SP
∗1
Tch
P
D
∗2
Limits
−20
±10
±2.4
±9.6
−0.8
−9.6
150
1.0
Unit
V
V
A
A
A
A
°C
W / ELEMENT
<Di>
Parameter
Repetitive peak reverse voltage
Reverse voltage
Forward current
Forward current surge peak
Junction temperature
Power dissipation
∗1
60H
Z
/ 1Cycle
∗2
Mounted on a ceramic board
Symbol
V
RM
V
R
I
F
I
FSM
∗1
Tj
P
D
∗2
Limits
30
20
1.0
3.0
150
1.0
Unit
V
V
A
A
°C
W / ELEMENT
<MOSFET and Di>
Parameter
Total power dissipation
Range of Storage temperature
Mounted on a ceramic board
Symbol
P
D
Tstg
Limits
1.25
−55
to
+150
Unit
W / TOTAL
°C
www.rohm.com
c
2009 ROHM Co., Ltd. All rights reserved.
1/5
2009.06 - Rev.A

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