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UM6K1N_1

Description
2.5V Drive Nch+Nch MOS FET
File Size65KB,4 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
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UM6K1N_1 Overview

2.5V Drive Nch+Nch MOS FET

UM6K1N
Transistors
2.5V Drive Nch+Nch MOS FET
UM6K1N
Structure
Silicon N-channel MOS FET
External dimensions
(Unit : mm)
UMT6
2.0
1.3
0.9
0.65
(5)
(6)
(4)
Features
1) Two 2SK3018 transistors in a single UMT package.
2) The MOS FET elements are independent, eliminating
mutual interference.
3) Mounting cost and area can be cut in half.
4) Low On-resistance.
5) Low voltage drive (2.5V drive) makes this device ideal for
portable equipment.
0.65
0.7
1pin mark
(1)
(2)
(3)
1.25
2.1
0.2
0.15
Each lead has same dimensions
Abbreviated symbol : K1
Applications
Interfacing, switching (30V, 100mA)
Packaging specifications
Package
Type
UM6K1N
Code
Basic ordering unit (pieces)
Taping
TN
3000
Inner circuit
(6)
(5)
Gate
Protection
Diode
0.1Min.
(4)
Tr1
Tr2
(1)
Gate
Protection
Diode
(2)
(3)
Absolute maximum ratings
(Ta=25°C)
<It is the same ratings for Tr1 and Tr2.>
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Total power dissipation
Channel temperature
Range of storage temperature
∗1
Pw≤10µs, Duty cycle≤1%
∗2
With each pin mounted on the recommended lands.
(1)
(2)
(3)
(4)
(5)
(6)
Tr1
Tr1
Tr2
Tr2
Tr2
Tr1
Source
Gate
Drain
Source
Gate
Drain
A protection diode has been built
in between the gate and the source
to protect against static electricity
when the product is in use.
Use the protection circuit when
rated voltages are exceeded.
Continuous
Pulsed
Symbol
V
DSS
V
GSS
I
D
I
DP
∗1
P
D
∗2
Tch
Tstg
Limits
30
±20
±100
±400
150
150
−55
to
+150
Unit
V
V
mA
mA
mW
°C
°C
Thermal resistance
Parameter
Channel to ambient
With each pin mounted on the recommended lands.
Symbol
Rth(ch-a)
Limits
833
1042
Unit
°C
/ W / TOTAL
°C
/ W / ELEMENT
Rev.B
1/3

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