Date
Jun. 18. 2001
8M (x8/x16) Flash Memory
LH28F800BJE-PBTL10
LHF80J08
qHandle
this document carefully for it contains material protected by international copyright law.
Any reproduction, full or in part, of this material is prohibited without the express written
permission of the company.
qWhen
using the products covered herein, please observe the conditions written herein and the
precautions outlined in the following paragraphs. In no event shall the company be liable for any
damages resulting from failure to strictly adhere to these conditions and precautions.
(1) The products covered herein are designed and manufactured for the following application
areas. When using the products covered herein for the equipment listed in Paragraph (2),
even for the following application areas, be sure to observe the precautions given in
Paragraph (2). Never use the products for the equipment listed in Paragraph (3).
•Office
electronics
•Instrumentation
and measuring equipment
•Machine
tools
•Audiovisual
equipment
•Home
appliance
•Communication
equipment other than for trunk lines
(2) Those contemplating using the products covered herein for the following equipment which
demands high reliability, should first contact a sales representative of the company and then
accept responsibility for incorporating into the design fail-safe operation, redundancy, and
other appropriate measures for ensuring reliability and safety of the equipment and the
overall system.
•Control
and safety devices for airplanes, trains, automobiles, and other
transportation equipment
•Mainframe
computers
•Traffic
control systems
•Gas
leak detectors and automatic cutoff devices
•Rescue
and security equipment
•Other
safety devices and safety equipment, etc.
(3) Do not use the products covered herein for the following equipment which demands
extremely high performance in terms of functionality, reliability, or accuracy.
•Aerospace
equipment
•Communications
equipment for trunk lines
•Control
equipment for the nuclear power industry
•Medical
equipment related to life support, etc.
(4) Please direct all queries and comments regarding the interpretation of the above three
Paragraphs to a sales representative of the company.
qPlease
direct all queries regarding the products covered herein to a sales representative of the
company.
Rev. 1.27
LHF80J08
1
CONTENTS
PAGE
1 INTRODUCTION.............................................................. 3
1.1 Features ........................................................................ 3
1.2 Product Overview......................................................... 3
1.3 Product Description...................................................... 4
1.3.1 Package Pinout ....................................................... 4
1.3.2 Block Organization................................................. 4
2 PRINCIPLES OF OPERATION........................................ 7
2.1 Data Protection............................................................. 8
3 BUS OPERATION ............................................................ 8
3.1 Read.............................................................................. 8
3.2 Output Disable.............................................................. 8
3.3 Standby......................................................................... 8
3.4 Reset............................................................................. 8
3.5 Read Identifier Codes................................................... 9
3.6 OTP(One Time Program) Block .................................. 9
3.7 Write........................................................................... 10
4 COMMAND DEFINITIONS........................................... 10
4.1 Read Array Command................................................ 12
4.2 Read Identifier Codes Command ............................... 12
4.3 Read Status Register Command ................................. 12
4.4 Clear Status Register Command................................. 12
4.5 Block Erase Command............................................... 13
4.6 Full Chip Erase Command ......................................... 13
4.7 Word/Byte Write Command....................................... 13
4.8 Block Erase Suspend Command ................................ 14
4.9 Word/Byte Write Suspend Command ........................ 14
4.10 Set Block and Permanent Lock-Bit Commands ....... 15
4.11 Clear Block Lock-Bits Command ............................ 15
4.12 OTP Program Command .......................................... 16
4.13 Block Locking by the WP# ...................................... 16
PAGE
5 DESIGN CONSIDERATIONS ....................................... 27
5.1 Three-Line Output Control ........................................ 27
5.2 RY/BY# and WSM Polling ....................................... 27
5.3 Power Supply Decoupling ......................................... 27
5.4 V
CCW
Trace on Printed Circuit Boards ..................... 27
5.5 V
CC
, V
CCW
, RP# Transitions .................................... 27
5.6 Power-Up/Down Protection....................................... 28
5.7 Power Dissipation ...................................................... 28
5.8 Data Protection Method ............................................. 28
6 ELECTRICAL SPECIFICATIONS ................................ 29
6.1 Absolute Maximum Ratings ...................................... 29
6.2 Operating Conditions ................................................. 29
6.2.1 Capacitance .......................................................... 29
6.2.2 AC Input/Output Test Conditions ........................ 30
6.2.3 DC Characteristics ............................................... 31
6.2.4 AC Characteristics - Read-Only Operations ........ 33
6.2.5 AC Characteristics - Write Operations ................ 36
6.2.6 Alternative CE#-Controlled Writes...................... 38
6.2.7 Reset Operations .................................................. 40
6.2.8 Block Erase, Full Chip Erase, Word/Byte Write and
Lock-Bit Configuration Performance ................. 41
Rev. 1.27
LHF80J08
2
LH28F800BJE-PBTL10
8M-BIT ( 512Kbit ×16 / 1Mbit ×8 )
Boot Block Flash MEMORY
s
Low Voltage Operation
V
CC
=V
CCW
=2.7V-3.6V Single Voltage
s
Enhanced Automated Suspend Options
Word/Byte Write Suspend to Read
Block Erase Suspend to Word/Byte Write
Block Erase Suspend to Read
s
OTP(One Time Program) Block
3963 word + 4 word Program only array
s
User-Configurable ×8 or ×16 Operation
s
High-Performance Read Access Time
100ns(V
CC
=2.7V-3.6V)
s
Enhanced Data Protection Features
s
Operating Temperature
0°C to +70°C
Absolute Protection with V
CCW
≤V
CCWLK
Block Erase, Full Chip Erase, Word/Byte Write and
Lock-Bit Configuration Lockout during Power
Transitions
Block Locking with Command and WP#
Permanent Locking
s
Low Power Management
Typ. 2µA (V
CC
=3.0V) Standby Current
Automatic Power Savings Mode Decreases I
CCR
in
Static Mode
Typ. 120µA (V
CC
=3.0V, T
A
=+25°C, f=32kHz)
Read Current
s
Automated Block Erase, Full Chip Erase,
Word/Byte Write and Lock-Bit Configuration
Command User Interface (CUI)
Status Register (SR)
s
SRAM-Compatible Write Interface
s
Industry-Standard Packaging
48-Lead TSOP
s
Optimized Array Blocking Architecture
Two 4K-word (8K-byte) Boot Blocks
Six 4K-word (8K-byte) Parameter Blocks
Fifteen 32K-word (64K-byte) Main Blocks
Bottom Boot Location
s
ETOX
TM*
Nonvolatile Flash Technology
s
CMOS Process (P-type silicon substrate)
s
Not designed or rated as radiation hardened
s
Extended Cycling Capability
Minimum 100,000 Block Erase Cycles
The product is a high-density, low-cost, nonvolatile, read/write storage solution for a wide range of applications.
The product can operate at V
CC
=2.7V-3.6V and V
CCW
=2.7V-3.6V or 11.7V-12.3V. Its low voltage operation capability
realize battery life and suits for cellular phone application.
Its Boot, Parameter and Main-blocked architecture, low voltage and extended cycling provide for highly flexible component
suitable for portable terminals and personal computers. Its enhanced suspend capabilities provide for an ideal solution for code
+ data storage applications.
For secure code storage applications, such as networking, where code is either directly executed out of flash or downloaded to
DRAM, the product offers four levels of protection: absolute protection with V
CCW
≤V
CCWLK
, selective hardware block
locking or flexible software block locking. These alternatives give designers ultimate control of their code security needs.
The product is manufactured on SHARP’s 0.25µm ETOX
TM*
process technology. It come in industry-standard package: the
48-lead TSOP, ideal for board constrained applications.
*ETOX is a trademark of Intel Corporation.
Rev. 1.27
LHF80J08
3
1 INTRODUCTION
This datasheet contains the product specifications. Section
1 provides a flash memory overview. Sections 2, 3, 4 and
5 describe the memory organization and functionality.
Section 6 covers electrical specifications.
1.1 Features
Key enhancements of the product are:
•Single
low voltage operation
•Low
power consumption
•Enhanced
Suspend Capabilities
•Boot
Block Architecture
Please note following:
•V
CCWLK
has been lowered to 1.0V to support 2.7V-
3.6V block erase, full chip erase, word/byte write and
lock-bit configuration operations. The V
CCW
voltage
transitions to GND is recommended for designs that
switch V
CCW
off during read operation.
A block erase operation erases one of the device’s 32K-
word/64K-byte blocks typically within 1.2s (3V V
CC
, 3V
V
CCW
), 4K-word/8K-byte blocks typically within 0.6s (3V
V
CC
, 3V V
CCW
) independent of other blocks. Each block
can be independently erased minimum 100,000 times.
Block erase suspend mode allows system software to
suspend block erase to read or write data from any other
block.
Writing memory data is performed in word/byte
increments of the device’s 32K-word blocks typically
within 33µs (3V V
CC
, 3V V
CCW
), 64K-byte blocks
typically within 31µs (3V V
CC
, 3V V
CCW
), 4K-word
blocks typically within 36µs (3V V
CC
, 3V V
CCW
), 8K-
byte blocks typically within 32µs (3V V
CC
, 3V V
CCW
).
Word/byte write suspend mode enables the system to read
data or execute code from any other flash memory array
location.
Individual block locking uses a combination of bits, thirty-
nine block lock-bits, a permanent lock-bit and WP# pin, to
lock and unlock blocks. Block lock-bits gate block erase,
full chip erase and word/byte write operations, while the
permanent lock-bit gates block lock-bit modification and
locked block alternation. Lock-bit configuration
operations (Set Block Lock-Bit, Set Permanent Lock-Bit
and Clear Block Lock-Bits commands) set and cleared
lock-bits.
The status register indicates when the WSM’s block erase,
full chip erase, word/byte write or lock-bit configuration
operation is finished.
The RY/BY# output gives an additional indicator of WSM
activity by providing both a hardware signal of status
(versus software polling) and status masking (interrupt
masking for background block erase, for example). Status
polling using RY/BY# minimizes both CPU overhead and
system power consumption. When low, RY/BY# indicates
that the WSM is performing a block erase, full chip erase,
word/byte write or lock-bit configuration. RY/BY#-high Z
indicates that the WSM is ready for a new command,
block erase is suspended (and word/byte write is
inactive), word/byte write is suspended, or the device is in
reset mode.
1.2 Product Overview
The product is a high-performance 8M-bit Boot Block
Flash memory organized as 512K-word of 16 bits or 1M-
byte of 8 bits. The 512K-word/1M-byte of data is arranged
in two 4K-word/8K-byte boot blocks, six 4K-word/8K-
byte parameter blocks and fifteen 32K-word/64K-byte
main blocks which are individually erasable, lockable and
unlockable in-system. The memory map is shown in
Figure 3.
The dedicated V
CCW
pin gives complete data protection
when V
CCW
≤V
CCWLK
.
A Command User Interface (CUI) serves as the interface
between the system processor and internal operation of the
device. A valid command sequence written to the CUI
initiates device automation. An internal Write State
Machine (WSM) automatically executes the algorithms
and timings necessary for block erase, full chip erase,
word/byte write and lock-bit configuration operations.
Rev. 1.27
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