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RTF015N03

Description
2.5V Drive Nch MOSFET
File Size152KB,4 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
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RTF015N03 Overview

2.5V Drive Nch MOSFET

2.5V Drive Nch MOSFET
RTF015N03
Structure
Silicon N-channel MOSFET
Dimensions
(Unit : mm)
TUMT3
0.85Max.
0.77
2.0
0.2
Features
1) Low On-resistance.
2) Space saving, small surface mount package (TUMT3).
3) Low voltage drive (2.5V drive).
(1) Gate
0.3
(3)
1.7
(1)
(2)
2.1
0~0.1
0.65 0.65
1.3
0.17
Applications
Switching
Packaging specifications
Package
Type
RTF015N03
Code
Basic ordering unit (pieces)
Taping
TL
3000
(2) Source
(3) Drain
Abbreviated symbol : PP
Inner circuit
(3)
(1)
∗1
∗2
(2)
∗1
ESD PROTECTION DIODE
∗2
BODY DIODE
(1) Gate
(2) Source
(3) Drain
Absolute maximum ratings
(Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Total power dissipation
Channel temperature
Range of storage temperature
∗1
Pw≤10µs, Duty cycle≤1%
∗2
Mounted on a ceramic board
Continuous
Pulsed
Continuous
Pulsed
Symbol
V
DSS
V
GSS
I
D
I
DP
∗1
I
S
I
SP
∗1
P
D
∗2
Tch
Tstg
Limits
30
12
±1.5
±6.0
0.6
6.0
0.8
150
−55
to
+150
Unit
V
V
A
A
A
A
W
°C
°C
Thermal resistance
Parameter
Channel to ambient
Mounted on a ceramic board
Symbol
Rth(ch-a)
Limits
156
Unit
°C/W
www.rohm.com
c
2009 ROHM Co., Ltd. All rights reserved.
0.2Max.
0.2
1/3
2009.03 - Rev.A

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