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LVA368B

Description
Zener Diode, 6.8V V(Z), 5%, 0.4W,
CategoryDiscrete semiconductor    diode   
File Size48KB,2 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric View All

LVA368B Overview

Zener Diode, 6.8V V(Z), 5%, 0.4W,

LVA368B Parametric

Parameter NameAttribute value
MakerMicrosemi
Reach Compliance Codecompliant
ECCN codeEAR99
ConfigurationSINGLE
Diode typeZENER DIODE
Maximum dynamic impedance50 Ω
Number of components1
Maximum operating temperature175 °C
Maximum power dissipation0.4 W
Nominal reference voltage6.8 V
surface mountNO
Maximum voltage tolerance5%
Working test current1 mA
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
LOW VOLTAGE AVALANCHE
ZENER DIODE
– LOW NOISE, LOW VOLTAGE
– DESIGNED FOR USE AT LOW CURRENT LEVELS
– METALLURGICALLY BONDED
Qualified per MIL-PRF-19500/
QUALIFIED LEVELS
DEVICES
LVA43A – LVA100A
LVA343A – LVA3100A
LVA450A – LVA498A
MAXIMUM RATING AT 25°C
Junction and Storage Temperature:
DC Power Dissipation:
Power Derating:
-65°C to +175°C
400mW @ +25°C
Derate linearly to zero @ 175°C
Ø.068/.076
[1.73/1.93]
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C, unless otherwise specified)
TYPE
NUMBER
Similar
to
JEDEC
Type
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
1N6082
1N6083
1N6084
1N6085
1N6086
1N6087
1N6088
1N6089
1N6090
1N6091
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
Zener
Voltage
Nom.
Vz
Volts
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10.0
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10.0
5.0
5.3
5.6
5.9
6.2
6.5
6.8
7.1
7.4
7.7
8.0
8.3
8.6
8.9
9.2
9.5
9.8
Test
Current
Izt
Maximum
Dynamic
Impedance
Zz
Note (1)
Ohms
18
15
15
40
50
50
100
100
100
100
18
18
18
40
45
50
50
60
60
60
700
250
100
100
100
100
100
175
175
175
175
175
175
175
175
175
175
Maximum
Reverse
Current
Ir @ Vr
μA
4.0
4.0
0.10
0.05
0.05
0.05
0.01
0.01
0.01
0.01
5.00
5.00
5.00
5.00
2.00
2.00
2.00
1.00
1.00
1.00
10.0
5.0
5.0
5.0
5.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
1.0
1.0
1.0
1.0
1.0
Reverse
Voltage
Vr
Maximum
Noise
Density
Nd @ 250μ
Not3 (3)
μV/√Hz
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
4.0
ΔVz
IzL – Izh
Note (2)
ΔVz
IzL
IzH
Vf
@
200mA
max
1.2
1.2
1.2
1.2
1.2
1.2
1.2
1.2
1.2
1.2
1.2
1.2
1.2
1.2
1.2
1.2
1.2
1.2
1.2
1.2
1.2
1.2
1.2
1.2
1.2
1.2
1.2
1.2
1.2
1.2
1.2
1.2
1.2
1.2
1.2
1.2
1.2
ALL DIMENSIONS IN
Ø.018/.022
[.46/.56]
POLARITY
BAND
(CATHODE)
LVA43A 1/
LVA47A
LVA51A
LVA56A
LVA62A
LVA68A
LVA75A
LVA82A
LVA91A
LVA100A
LVA343A 2/
LVA347A
LVA351A
LVA356A
LVA362A
LVA368A
LVA375A
LVA382A
LVA391A
LVA3100A
LVA450A 3/
LVA453A
LVA456A
LVA459A
LVA462A
LVA465A
LVA468A
LVA471A
LVA474A
LVA477A
LVA480A
LVA483A
LVA486A
LVA489A
LVA492A
LVA495A
LVA498A
mA
20.0
10.0
5.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
20.0
10.0
5.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
Volts
1.5
1.5
2.0
3.0
4.0
5.0
6.0
6.5
8.0
9.0
1.5
2.0
3.0
4.5
5.6
6.2
6.8
7.5
8.2
9.1
4.0
4.08
4.48
4.72
4.96
5.2
5.44
5.68
5.92
6.16
6.4
6.64
6.88
7.12
7.36
7.6
7.84
V
1.125
0.75
0.45
0.15
0.15
0.15
0.15
0.15
0.15
0.15
0.95
0.50
0.50
0.50
0.10
0.10
0.10
0.10
0.10
0.10
0.40
0.20
0.10
0.10
0.10
0.10
0.10
0.10
0.10
0.10
0.10
0.10
0.10
0.10
0.10
0.10
0.10
mA
2.0
1.0
0.25
0.25
0.01
0.01
0.01
0.01
0.01
0.01
2.0
1.0
0.25
0.25
0.01
0.01
0.01
0.01
0.01
0.01
0.1
0.1
0.05
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
IzH
20.0
10.0
5.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
20.0
10.0
5.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
.150/.170
[3.81/4.32]
1.000 MIN
[25.400]
INCH
[MM]
FIGURE 1
DESIGN DATA
CASE:
Hermetically sealed glass
case. DO-35 outline.
LEAD MATERIAL:
Copper
clad steel.
LEAD FINISH:
Tin / Lead
THERMAL RESISTANCE:
(RθJEC): 250°C/W maximum at
L = .375 inch
THERMAL IMPEDANCE:
(ZθJX): 35°C/W maximum
POLARITY:
Diode to be
operated with the banded
(Cathode) en positive.
MOUNTING POSITION:
Any
NOTE:
1/ Suffix A
± 5%,
B ± 2%,
C ± 1%
2/ Suffix A
± 10%, B ± 5%,
C ± 2%,
D ± 1%
3/ Suffix A
± 0.2V, B ± 0.15V, C ± 0.11V
Note (1): Zener impedance is derived by superimposing on Izt a 60Hz rms a.c. current equal to 10% of Izt
Note (2):
ΔVz
is the difference between Vz @ IzL and IzH measured with the device junction in thermal equilibrium at the ambient temperature of
+25°C ±3°C
Note (3): Measured from 1000 to 3000 Hz
LDS-0054 Rev. 1 (080226)
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