RATING AND CHARACTERISTICS CURVES (TIP120)
r
(t),
TRANSIENT THERMAL RESISTANCE, (NORMALIZED)
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
D =0.01
SINGLE PULSE
D =0.2
D =0.1
P
(pk)
D =0.05
D =0.02
Z
qJC
= r(t) R
qJC
R
qJC
= 1.92
O
C/W MAX.
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
-T
C
= P
(pk)
Z
qJC(t)
D =0.5
t
1
t
2
DUTY CYCLE, D =t
1
/t
2
0.01
0.01
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
t
,
TIME, (mS)
10
20
50
100 200
500
1000
Figure1 THERMAL RESISTANCE
20
10
5.0
2.0
1.0
0.5
0.2
0.1
0.05
0.02
1.0
DC
1mS
5mS
BONDING WIRE LIMITED
THERMALLY LIMITED
@T
C
=25
O
C(SINGLE PULSE)
SECOND BREAKDOWN LIMITED
CURVE APPLY BELOW
RATED V
CEO
T
J
=150
O
C
500uS
100uS
I
C,
COLLECTOR CURRENT, (A)
There are two limitations on the power handing ability of a tran-
sistor average junction temperature and second breakdown.Safe
operating aresa curves indicate I
C
-V
CE
limits of the transistor th-
at must be observed for reliable operation, i.e.,the transistor must
not be subjected to greater dissipation than the curves indicate.
The data of Figure 2 is based on T
J(pk)
=150
O
C,T
C
is variable d-
epending on conditions. Second breakdown pulse limit are valid
for duty cycles to 10% provided T
J(pk)
<150
O
C.T
J(pk)
may be calc-
ulated from the data in Figure 1. At high case temperatures, ther-
mal limitations will reduce the power that can be handled to valu-
es less than the limitations imposed by second breakdown.
2.0
3.0
5.0 7.0
10
20
30
50
70 100
Figure2 ACTIVE-REGION SAFE OPERATING AREA
10K
T
C
= 25 C
V
CE
= 40 Vdc
O
V
CE,
COLLECTOR-EMITTER VOLTAGE, (V)
300
hFE, SMALL-SIGNAL CURRENT GAIN
C, CAPACITANCE, (pF)
5K
3K
2K
1K
500
300
200
100
50
30
20
10
1.0
T
J
= 25 C
O
I
C
= 3.0 Adc
200
C
ob
100
70
50
C
jb
2.0
5.0
10
20
50
100 200
500 1K
30
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
Figure3 Small-Signal Current Gain
f
,
FREQUENCY, (KHz)
Figure4 CAPACITANCE
V
R,
REVERSE VOLTAGE, (V)
RATING AND CHARACTERISTICS CURVES (TIP120)
V
CE
, COLLECTOR-EMITTER VOLTAGE, (V)
20K
10K
V
CE
= 4.0 V
3.0
I
C
= 2.0A
4.0A
6.0A
T
J
= 25 C
O
hFE, DC CURRENT GAIN
5K
3K
2K
1K
500
300
200
0.1
T
J
= 150 C
T
J
= 25 C
T
J
= -55 C
O
O
O
2.6
2.2
1.8
1.4
0.2
0.3
0.5 0.7 1.0
2.0
3.0
5.0 7.0 10
1.0
0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20 30
Figure5 DC CURRENT GAIN
I
C,
COLLECTOR CURRENT, (A)
Figure6 COLLECTOR SATURATION REGION
I
B,
BASE CURRENT, (A)
3.0
T
J
= 25
O
C
2.5
V
,
VOLTAGE, (V)
2.0
1.5
V
BE(sat)
@ I
C
/I
B
=250
V
BE
@ V
CE
=4.0V
1.0
V
CE(sat)
@ I
C
/I
B
=250
0.5
0.1
0.2
0.3
0.5 0.7
1.0
2.0
3.0
5.0
7.0 10
Figure7 "ON" VOLTAGES
I
C,
COLLECTOR CURRENT, (A)
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