The LC0402FCxxC Series Flip Chips employ advanced silicon P/N junction technology for unmatched board-level transient voltage protection against Electrostatic Dis-
charge (ESD) and Electrical Fast Transients (EFT). Developed specifically for high-density circuit protection, this series meets the IEC 61000-4-2 and 61000-4-4 require-
ments. These devices are ideally suited for handheld devices, PCMCIA and SMART cards.
This low capacitance series provides ESD protection greater than 25 kilovolts with a peak pulse power dissipation of 200 Watts per line for an 8/20µs waveform. In ad-
dition, the LC0402FCxxC series features superior clamping performance, low leakage current characteristics and a response time of less than a nanosecond. Their low
inductance virtually eliminates overshoot voltage due to package inductance.
FEATuREs
•
•
•
•
•
•
•
•
•
•
•
•
Compatible with IEC 61000-4-2 (ESD): Air 15kV, Contact 8kV
Compatible with IEC 61000-4-4 (EFT): 40A, 5/50ns
ESD Protection > 25 kilovolts
Available in Voltages Ranging from 3.3V to 36V
200 Watts Peak Pulse Power per Line (tp = 8/20µs)
Bidirectional and Monolithic Structure
Low Clamping Voltage
Low Capacitance
Low Leakage Current
Protection for 1 Line
RoHS Compliant
REACH Compliant
APPLICATIONs
• SMART Phones
• Portable Electronics
• SMART Cards
MEChANICAL ChARACTERIsTICs
•
•
•
•
•
•
•
•
Standard EIA Chip Size: 0402
Approximate Weight: 0.73 milligrams
Lead-Free Plating
Solder Reflow Temperature:
Lead-Free - Sn/Ag/Cu, 96/3.5/0.5: 260-270°C
Flammability Rating UL 94V-0
8mm Tape per EIA Standard 481
Top Contacts: Solder Bump 0.004” in Height (Nominal)
PIN CONFIGuRATION
05139.R8 2/11
Page 1
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05139
Only One Name Means ProTek’Tion™
LC0402FC3.3C - LC0402FC36C
TyPICAL DEvICE ChARACTERIsTICs
MAXIMuM RATINGs
@ 25°C unless Otherwise specified
PARAMETER
Peak Pulse Power (tp = 8/20µs) - See Figure 1
Operating Temperature
Storage Temperature
syMBOL
P
PP
T
A
T
STG
vALuE
200
-55 to 150
-55 to 150
uNITs
Watts
°C
°C
ELECTRICAL ChARACTERIsTICs PER LINE
@ 25°C unless Otherwise specified
PART
NuMBER
(Note 1)
RATED
sTAND-OFF
vOLTAGE
v
WM
vOLTs
LC0402FC3.3C
LC0402FC05C
LC0402FC08C
LC0402FC12C
LC0402FC15C
LC0402FC24C
LC0402FC36C
NOTEs
3.3
5.9
8.0
12.0
15.0
24.0
36.0
MINIMuM
BREAKDOWN
vOLTAGE
@ 1mA
v
(BR)
vOLTs
4.0
6.0
8.5
13.3
16.7
26.7
40.0
MAXIMuM
CLAMPING
vOLTAGE
(Fig. 2)
@ I
P
= 1A
v
C
vOLTs
7.0
11.0
13.2
19.8
25.4
37.2
70.0
MAXIMuM
CLAMPING
vOLTAGE
(Fig. 2)
@ 8/20µs
v
C
@ I
PP
12.5V @ 16A
13.0V @ 15A
18.0V @ 11A
26.9V @ 7.4A
34.5V @ 5.8A
50.6V @ 4A
80.0V @ 2.5A
MAXIMuM
LEAKAGE
CuRRENT
(Note 2)
@v
WM
I
D
µA
75*
10**
1
1
1
1
1
TyPICAL
CAPACITANCE
@0v, 1Mhz
C
pF
70
35
32
30
25
20
18
1. All devices are bidirectional. Electrical characteristics apply in both directions.
2. *Maximum leakage current < 5µA @ 2.8V. **Maximum leakage current < 500nA @ 3.3V.
05139.R8 2/11
Page 2
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05139
Only One Name Means ProTek’Tion™
LC0402FC3.3C - LC0402FC36C
TyPICAL DEvICE ChARACTERIsTICs
FIGuRE 1
PEAK PuLsE POWER vs PuLsE TIME
10,000
P
PP
- Peak Pulse Power - Watts
1,000
200W, 8/20µs Waveform
100
10
0.1
1
10
100
t
d
- Pulse Duration - µs
1,000
10,000
120
I
PP
- Peak Pulse Current - % of I
PP
FIGuRE 2
PuLsE WAvE FORM
t
f
Peak Value I
PP
TEST
WAVEFORM
PARAMETERS
t
f
= 8µs
t
d
= 20µs
100
80
% Of Rated Power
FIGuRE 3
POWER DERATING CuRvE
Peak Pulse Power
8/20µs
100
80
60
40
20
0
0
5
e
-t
60
40
20
0
Average Power
t
d
= t/(I
PP
/2)
10
15
t - Time - µs
20
25
30
0
25
50
75 100 125
T
A
- Ambient Temperature - °C
150
05139.R8 2/11
Page 3
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05139
Only One Name Means ProTek’Tion™
LC0402FC3.3C - LC0402FC36C
TyPICAL DEvICE ChARACTERIsTICs
FIGuRE 4
OvERshOOT & CLAMPING vOLTAGE FOR LC0402FC05C
35
25
5 volts per Division
15
5
-5
EsD Test Pulse - 25 kilovolt, 1/30ns (Waveshape)
FIGuRE 5
TyPICAL CLAMPING vOLTAGE vs PEAK PuLsE CuRRENT LC0402FC05C
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