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LP1016E

Description
Variable Capacitance Diode, Ultra High Frequency, 3pF C(T), 25V, Silicon, Abrupt,
CategoryDiscrete semiconductor    diode   
File Size62KB,1 Pages
ManufacturerAPI Technologies
Websitehttp://www.apitech.com/about-api
Download Datasheet Parametric View All

LP1016E Overview

Variable Capacitance Diode, Ultra High Frequency, 3pF C(T), 25V, Silicon, Abrupt,

LP1016E Parametric

Parameter NameAttribute value
MakerAPI Technologies
package instructionO-CEMW-N2
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresLOW INDUCTANCE
Minimum breakdown voltage25 V
ConfigurationSINGLE
Diode Capacitance Tolerance10%
Minimum diode capacitance ratio4.1
Nominal diode capacitance3 pF
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
frequency bandULTRA HIGH FREQUENCY
JESD-30 codeO-CEMW-N2
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formMICROWAVE
Maximum power dissipation5 W
Certification statusNot Qualified
minimum quality factor900
Maximum repetitive peak reverse voltage25 V
Maximum reverse current0.02 µA
Reverse test voltage20 V
surface mountYES
Terminal formNO LEAD
Terminal locationEND
Varactor Diode ClassificationABRUPT
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