RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
USF31
THRU
USF34
GLASS PASSIVATED ULTRAFAST RECTIFIER
VOLTAGE RANGE 50 to 200 Volts CURRENT 3.0 Amperes
FEATURES
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*
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*
*
*
*
High reliability
Low leakage
Low forward voltage
High current capability
Super fast switching speed
High surge capability
Good for switching mode circuit
DO-201AD
MECHANICAL DATA
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*
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Case: Molded plastic
Epoxy: Device has UL flammability classification 94V-O
Lead: MIL-STD-202E method 208C guaranteed
Mounting position: Any
Weight: 1.18 grams
1.0 (25.4)
MIN.
.052 (1.3)
DIA.
.048 (1.2)
.375 (9.5)
.335 (8.5)
.220 (5.6)
.197 (5.0)
DIA.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
o
1.0 (25.4)
MIN.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS
(At T
A
= 25
o
C unless otherwise noted)
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Volts
Maximum DC Blocking Voltage
Maximum Average Forward Current
o
at T
A
= 55 C
Peak Forward Surge Current I
FM
(surge):8.3 ms single half
sine-wave superimposed on rated load (JEDEC method)
Typical Junction Capacitance (Note 2)
Operating and Storage Temperature Range
SYMBOL
V
RRM
V
RMS
V
DC
I
O
I
FSM
C
J
T
J
, T
STG
USF31
50
35
50
USF32
100
70
100
3.0
125
20
-55 to + 150
USF33
150
105
150
USF34
200
140
200
UNITS
Volts
Volts
Volts
Amps
Amps
pF
0
C
ELECTRICAL CHARACTERISTICS
(At T
A
= 25 C unless otherwise noted)
CHARACTERISTICS
Maximum Forward Voltage at 3.0A DC
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Maximum Reverse Recovery Time (Note 1)
NOTES : 1. Test Conditions: I
F
=0.5A, I
R
=-1.0A, I
RR
=-0.25A.
2. Measured at 1 MH
Z
and applied reverse voltage of 4.0 volts.
@T
A
= 25
o
C
@T
A
=100
o
C
SYMBOL
V
F
I
R
trr
USF31
USF32
0.95
10
uAmps
500
20
nSec
2004-5
REV: O
USF33
USF34
UNITS
Volts
o
RATING AND CHARACTERISTIC CURVES ( USF31 THRU USF34 )
FIG. 1 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
50
NONINDUCTIVE
10
NONINDUCTIVE
trr
+0.5A
(-)
PULSE
GENERATOR
AVERAGE FORWARD CURENT, (A)
FIG. 2 - TYPICAL FORWARD
CURRENT DERATING CURVE
6.0
5.0
4.0
3.0
2.0
1.0
0
0 25 50 75 100 125 150 175
AMBIENT TEMPERATURE (
)
Single Phase
Half Wave 60Hz
Resistive or
Inductive Load
(+)
25 Vdc
(approx)
(-)
D.U.T
0
-0.25A
(NOTE 2)
1
NON-
INDUCTIVE
OSCILLOSCOPE
(NOTE 1)
(+)
-1.0A
NOTES:
1 Rise Time = 7ns max. Input Impedance =
1 megohm. 22pF.
2. Rise Time = 10ns max. Source Impedance =
50 ohms.
1cm
SET TIME BASE FOR
10 ns/cm
FIG. 3 - TYPICAL REVERSE CHARACTERISTICS
INSTANTANEOUS REVERSE CURRENT, (uA)
INSTANTANEOUS FORWARD CURRENT, (A)
FIG. 4 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
100
100
TJ = 150
10
TJ = 100
10
1.0
TJ = 25
1
.1
TJ = 25
Pulse Width = 300uS
1% Duty Cycle
.1
.01
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
FIG. 5 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
PEAK FORWARD SURGE CURRENT, (A)
.01
0
.2
.4
.6
.8
1.0
1.2
1.4
INSTANTANEOUS FORWARD VOLTAGE, (V)
FIG. 6 - TYPICAL JUNCTION CAPACITANCE
JUNCTION CAPACITANCE, (pF)
175
150
125
100
75
50
25
0
1
2
5
10
20
50
NUMBER OF CYCLES AT 60Hz
100
8.3ms Single Half Sine-Wave
(JEDEC Method)
200
100
60
40
20
10
6
4
2
1
.1
.2
.4
1.0
2
4
10
20 40 100
TJ = 25
REVERSE VOLTAGE, ( V )
RECTRON
Microcontroller MCU
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