PD - 97452
AUTOMOTIVE GRADE
Features
l
l
l
l
l
l
l
HEXFET
®
Power MOSFET
D
AUIRFR4104
AUIRFU4104
40V
5.5mΩ
119A
42A
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
V
(BR)DSS
R
DS(on)
max.
I
D (Silicon Limited)
G
S
I
D (Package Limited)
Description
Specifically designed for Automotive applications, this
HEXFET
®
Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per
silicon area. Additional features of this design are a
175°C junction operating temperature, fast switching
speed and improved repetitive avalanche rating . These
features combine to make this design an extremely
efficient and reliable device for use in Automotive appli-
cations and a wide variety of other applications.
D
S
D-Pak
AUIRFR4104
G
D
G
I-Pak
AUIRFU4104
S
D
G
S
Gate
Drain
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (T
A
) is 25°C, unless otherwise specified.
Parameter
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V
(Silicon Limited)
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V
(Package Limited)
Pulsed Drain Current
I
DM
P
D
@T
C
= 25°C Power Dissipation
Linear Derating Factor
V
GS
Gate-to-Source Voltage
E
AS
Single Pulse Avalanche Energy (Thermally Limited)
E
AS
(tested )
Single Pulse Avalanche Energy Tested Value
I
AR
Avalanche Current
E
AR
Repetitive Avalanche Energy
T
J
Operating Junction and
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case )
Mounting Torque, 6-32 or M3 screw
Max.
119
84
42
480
140
0.95
± 20
145
310
See Fig.12a, 12b, 15, 16
-55 to + 175
Units
A
Ã
h
d
W
W/°C
V
mJ
A
mJ
°C
g
300
10 lbf in (1.1N m)
Thermal Resistance
R
θJC
R
θJA
R
θJA
Junction-to-Case
Junction-to-Ambient (PCB mount)
Junction-to-Ambient
y
y
j
Parameter
Typ.
–––
–––
–––
Max.
1.05
40
110
Units
°C/W
i
HEXFET
®
is a registered trademark of International Rectifier.
*Qualification
standards can be found at http://www.irf.com/
www.irf.com
1
02/10/2010
AUIRFR/U4104
Static Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
R
DS(on)
V
GS(th)
gfs
I
DSS
I
GSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min. Typ. Max. Units
40
–––
–––
2.0
58
–––
–––
–––
–––
–––
0.032
4.3
–––
–––
–––
–––
–––
–––
–––
–––
5.5
4.0
–––
20
250
200
-200
Conditions
V V
GS
= 0V, I
D
= 250µA
V/°C Reference to 25°C, I
D
= 1mA
mΩ V
GS
= 10V, I
D
= 42A
V V
DS
= V
GS
, I
D
= 100µA
S V
DS
= 10V, I
D
= 42A
µA V
DS
= 40V, V
GS
= 0V
V
DS
= 40V, V
GS
= 0V, T
J
= 125°C
nA V
GS
= 20V
V
GS
= -20V
e
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
59
19
24
17
69
37
36
4.5
7.5
2950
660
370
2130
590
850
89
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
nC
Conditions
I
D
= 42A
V
DS
= 32V
V
GS
= 10V
V
DD
= 20V
I
D
= 42A
R
G
= 6.8
Ω
V
GS
= 10V
Between lead,
e
e
ns
nH
6mm (0.25in.)
from package
and center of die contact
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 32V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 32V
pF
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
f
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
28
24
42
A
480
1.3
42
36
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 42A, V
GS
= 0V
T
J
= 25°C, I
F
= 42A, V
DD
= 20V
di/dt = 100A/µs
Ã
e
e
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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AUIRFR/U4104
Qualification Information
†
Automotive
(per AEC-Q101)
Qualification Level
††
Comments: This part number(s) passed Automotive qualification. IR’s
Industrial and Consumer qualification level is granted by extension of the
higher Automotive level.
D-PAK
I-PAK
Class M4
AEC-Q101-002
Class H1C
AEC-Q101-001
Class C3
AEC-Q101-005
Yes
MSL1
MSL1
Moisture Sensitivity Level
Machine Model
Human Body Model
Charged Device
Model
RoHS Compliant
ESD
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Exceptions to AEC-Q101 requirements are noted in the qualification report.
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3
AUIRFR/U4104
1000
TOP
V
GS
1000
TOP
ID, Drain-to-Source Current (A)
100
ID, Drain-to-Source Current (A)
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
100
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
V
GS
4.5V
10
10
4.5V
1
0.1
0
60µs PULSE WIDTH
Tj = 25°C
10
100
100
60µs PULSE WIDTH
Tj = 175°C
1
0.1
0
1
1
10
100
100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
120
Gfs, Forward Transconductance (S)
TJ = 25°C
ID, Drain-to-Source Current
(Α)
100
80
60
T J = 175°C
100
T J = 175°C
10
TJ = 25°C
40
20
0
0
20
40
60
80
100
ID, Drain-to-Source Current (A)
VDS = 20V
60µs PULSE WIDTH
1
4
6
8
10
VDS = 10V
380µs PULSE WIDTH
VGS, Gate-to-Source Voltage (V)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Typical Forward Transconductance
Vs. Drain Current
4
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AUIRFR/U4104
20
ID= 42A
VGS, Gate-to-Source Voltage (V)
5000
4000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
16
VDS= 32V
VDS= 20V
C, Capacitance (pF)
3000
Ciss
12
2000
8
1000
Coss
Crss
4
0
1
10
100
0
0
20
40
60
80
100
QG Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000.0
10000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100.0
1000
T J = 175°C
100
100µsec
10
1msec
1
Tc = 25°C
Tj = 175°C
Single Pulse
0
1
10
10msec
10.0
T J = 25°C
1.0
VGS = 0V
0.1
0.0
0.5
1.0
1.5
2.0
VSD, Source-toDrain Voltage (V)
0.1
100
1000
VDS , Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
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