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M36W0R5040L4ZSE

Description
Memory Circuit, Flash+PSRAM, CMOS, PBGA56
Categorystorage    storage   
File Size532KB,28 Pages
ManufacturerMicron Technology
Websitehttp://www.mdtic.com.tw/
Environmental Compliance
Download Datasheet Parametric View All

M36W0R5040L4ZSE Overview

Memory Circuit, Flash+PSRAM, CMOS, PBGA56

M36W0R5040L4ZSE Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerMicron Technology
package instructionFBGA, BGA56,6X10,20
Reach Compliance Codecompliant
Maximum access time70 ns
JESD-30 codeR-PBGA-B56
Memory IC TypeMEMORY CIRCUIT
Mixed memory typesFLASH+PSRAM
Number of terminals56
Maximum operating temperature85 °C
Minimum operating temperature-30 °C
Package body materialPLASTIC/EPOXY
encapsulated codeFBGA
Encapsulate equivalent codeBGA56,6X10,20
Package shapeRECTANGULAR
Package formGRID ARRAY, FINE PITCH
power supply1.8 V
Certification statusNot Qualified
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelOTHER
Terminal formBALL
Terminal pitch0.5 mm
Terminal locationBOTTOM
M36W0Rx0x0UL4
32- or 64-Mbit (mux I/O, multiple bank, multilevel, burst) flash
memory, 16- or 32-Mbit PSRAM, 1.8 V supply MCP
Features
Multichip package
– 1 die of 32 Mbit (2 Mbit x 16) or 64 Mbit
(4 Mbit x 16) mux I/O multiple bank,
multilevel, burst) flash memory
– 1 die of 16/32 Mbit mux I/O, burst PSRAM
Supply voltage
– V
DD
= V
DDQ
= 1.7 to 1.95 V
– V
PPF
= 9 V for fast programming
Electronic signature
– Manufacturer code: 20h
– 32 Mbit flash device codes:
Top - M36W0R5040U4: 8828h
Bottom - M36W0R5040L4: 8829h
– 64 Mbit flash device codes:
Top - M36W0R6040U4 and
M36W0R6050U4: 88C0h
Bottom - M36W0R6040L4 and
M36W0R6050L4: 88C1h
Synchronous/asynchronous read
– Synchronous burst read mode: 66 MHz
– Random access: 70 ns
Synchronous burst read suspend
Programming time
– 10 µs by word typical for factory program
– Double/quadruple word program option
Memory blocks
– Multiple bank memory array: 4 Mbit banks
– Parameter blocks (top or bottom location)
Dual operations
– Program erase in 1 bank, read in others
– No delay between read and write
Common flash interface (CFI)
Block locking
– All blocks locked at power-up
– Any combination of blocks can be locked
TFBGA56 (ZS)
8 x 6 mm
TFBGA88 (ZAM)
8 x 10 mm
– WP for block lock-down
Security
– 128 bit user programmable OTP cells
– 64 bit unique device number
100 000 program/erase cycles per block
Asynchronous modes
– Random read 70 ns access time
– Asynchronous write
Synchronous mode:
– NOR flash
– Full synchronous (burst read and write)
Burst read/write operations
– 4-, 8- and 16-word
– Clock frequency: 83 MHz
Low power consumption
– Active current: < 20 mA
– Standby current: 70 µA
Low power features
– Partial array self-refresh (PASR)
– Deep power-down (DPD) mode
– Automatic temperature-compensated self-
Refresh (ATSR)
Device summary
M36W0Rx0x0UL4
PSRAM
Flash memory
Table 1.
M36W0R5040U4
M36W0R6040U4
M36W0R6050U4
M36W0R5040L4
M36W0R6040L4
M36W0R6050L4
July 2008
Rev 6
1/28
www.numonyx.com
1

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