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MTD1312T4

Description
25A, 30V, 0.016ohm, N-CHANNEL, Si, POWER, MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size187KB,10 Pages
ManufacturerMotorola ( NXP )
Websitehttps://www.nxp.com
Download Datasheet Parametric View All

MTD1312T4 Overview

25A, 30V, 0.016ohm, N-CHANNEL, Si, POWER, MOSFET

MTD1312T4 Parametric

Parameter NameAttribute value
MakerMotorola ( NXP )
package instructionSMALL OUTLINE, R-PSSO-G2
Reach Compliance Codeunknown
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (Abs) (ID)25 A
Maximum drain current (ID)25 A
Maximum drain-source on-resistance0.016 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSSO-G2
JESD-609 codee0
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)72 W
Maximum pulsed drain current (IDM)75 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MTD1312/D
Advance Information
HDTMOS1A
High Density Power FET
DPAK for Surface Mount
N–Channel Enhancement Mode Silicon Gate
This advanced HDTMOS1A power FET is designed to withstand
high energy in the avalanche and commutation modes. This new
energy efficient design also offers a drain–to–source diode with a
fast recovery time. Designed for low voltage, high speed switching
applications in power supplies, converters, and PWM motor
controls, these devices are particularly well suited for bridge circuits
where diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected
voltage transients.
Source–to–Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
Diode Is Characterized for Use In Bridge Circuits
Surface Mount Package Available in 16 mm, 13″ / 2500 Unit
Tape & Reel, Add “T4” Suffix to Part Number
MAXIMUM RATINGS
(TC = 25°C unless otherwise noted)
Parameter
Drain–to–Source Voltage
Drain–to–Gate Voltage (RGS = 1.0 MΩ)
Gate–to–Source Voltage — Continuous
— Non–Repetitive (tp
10 ms)
Operating and Storage Temperature Range
MTD1312
SINGLE TMOS
POWER MOSFET
30 VOLTS
RDS(on) = 0.016 OHM
D
CASE 369A–13, Style 2
G
S
Symbol
VDSS
VDGR
VGS
VGSM
TJ, Tstg
Value
30
30
±
20
±
20
– 55 to 150
Unit
Vdc
Vdc
Vdc
Vpk
°C
POWER RATINGS
(TC = 25°C unless otherwise specified)
Parameter
Drain Current — Continuous
Drain Current
— Single Pulse (tp
10
m
s)
Continuous Source Current (Diode Conduction)
Total Power Dissipation @ TA = 25°C
Thermal Resistance — Junction–to–Case
Mounted on heat sink
TC = 25°C
VGS = 10 Vdc
Steady State
Symbol
ID
IDM
IS
PD
R
θJC
Value
25
75
25
72
1.72
Unit
Adc
Apk
Adc
Watts
°C/W
Parameter
Drain Current — Continuous
Drain Current
— Single Pulse (tp
10
m
s)
Continuous Source Current (Diode Conduction)
Total Power Dissipation @ TA = 25°C
Thermal Resistance — Junction–to–Ambient
Mounted on minimum recommended
FR–4 or G–10 board
VGS = 10 Vdc
Steady State
Symbol
ID
IDM
IS
PD
R
θJA
Value
6.0
18
1.1
1.0
118
Unit
Adc
Apk
Adc
Watts
°C/W
DEVICE MARKING
MTD1312
Device
MTD1312T4
ORDERING INFORMATION
Reel Size
13″
Tape Width
12 mm embossed tape
Quantity
2500 units
This document contains information on a new product. Specifications and information herein are subject to change without notice.
HDTMOS and HDTMOS1A are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
REV 0
Motorola
Inc. 1998
©
Motorola,
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