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MPS6714RL1

Description
1000mA, 30V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, TO-226AE, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size324KB,34 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric View All

MPS6714RL1 Overview

1000mA, 30V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, TO-226AE, 3 PIN

MPS6714RL1 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerON Semiconductor
Parts packaging codeTO-92
package instructionCYLINDRICAL, O-PBCY-T3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresEUROPEAN PART NUMBER
Maximum collector current (IC)1 A
Collector-emitter maximum voltage30 V
ConfigurationSINGLE
Minimum DC current gain (hFE)50
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN LEAD
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
One Watt Amplifier Transistors
NPN Silicon
COLLECTOR
3
2
BASE
1
EMITTER
MPS6714
MPS6715
MAXIMUM RATINGS
Rating
Collector – Emitter Voltage
MPS6714
MPS6715
Collector – Base Voltage
MPS6714
MPS6715
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
VEBO
IC
PD
PD
TJ, Tstg
VCBO
40
50
5.0
1.0
1.0
8.0
2.5
20
– 55 to +150
Vdc
Adc
Watts
mW/°C
Watts
mW/°C
°C
Symbol
VCEO
30
40
Vdc
Value
Unit
Vdc
1
2
3
CASE 29–05, STYLE 1
TO–92 (TO–226AE)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
R
q
JA
R
q
JC
Max
125
50
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1)
(IC = 10 mAdc, IB = 0)
Collector – Base Breakdown Voltage
(IC = 100
m
Adc, IE = 0)
Emitter – Base Breakdown Voltage
(IE = 100
m
Adc, IC = 0)
Collector Cutoff Current
(VCB = 40 Vdc, IE = 0)
(VCB = 50 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 5.0 Vdc, IC = 0)
1. Pulse Test: Pulse Width
MPS6714
MPS6715
IEBO
V(BR)CEO
MPS6714
MPS6715
V(BR)CBO
MPS6714
MPS6715
V(BR)EBO
ICBO
0.1
0.1
0.1
µAdc
40
50
5.0
Vdc
µAdc
30
40
Vdc
Vdc
v
30
m
s; Duty Cycle
v
2.0%.
2–602
Motorola Small–Signal Transistors, FETs and Diodes Device Data

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Index Files: 1808  1951  2838  167  1749  37  40  58  4  36 
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