MA4T636539RT7 datasheet, PDF - EEWORLD Datasheet

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MA4T636539RT7: DescriptionX BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-4; CategoryDiscrete semiconductor The transistor; File Size243KB，8 Pages; ManufacturerTE Connectivity; Websitehttp://www.te.com

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MA4T636539RT7 Overview

X BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-4

MA4T636539RT7 Parametric

Parameter Name	Attribute value
Maker	TE Connectivity
package instruction	SMALL OUTLINE, R-PDSO-G4
Contacts	4
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	LOW NOISE
Shell connection	COLLECTOR
Maximum collector current (IC)	0.065 A
Collector-based maximum capacity	0.7 pF
Configuration	SINGLE
highest frequency band	X BAND
JESD-30 code	R-PDSO-G4
Number of components	1
Number of terminals	4
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	10000 MHz

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MA4T636539RT7 Related Products

	MA4T636539RT7	MA4T636533RT3	MA4T636533RT7	MA4T636533TR3	MA4T636533TR7	MA4T636539TR3	MA4T636539TR7
Description	X BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-4	X BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-3	X BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-3	X BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-3	X BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-3	X BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-4	X BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-4
package instruction	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G4
Contacts	4	3	3	3	3	4	4
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknow	unknow
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Other features	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE
Maximum collector current (IC)	0.065 A	0.065 A	0.065 A	0.065 A	0.065 A	0.065 A	0.065 A
Collector-based maximum capacity	0.7 pF	0.7 pF	0.7 pF	0.7 pF	0.7 pF	0.7 pF	0.7 pF
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
highest frequency band	X BAND	X BAND	X BAND	X BAND	X BAND	X BAND	X BAND
JESD-30 code	R-PDSO-G4	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G4	R-PDSO-G4
Number of components	1	1	1	1	1	1	1
Number of terminals	4	3	3	3	3	4	4
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	NPN	NPN	NPN	NPN	NPN	NPN	NPN
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES	YES	YES	YES
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	10000 MHz	10000 MHz	10000 MHz	10000 MHz	10000 MHz	10000 MHz	10000 MHz
Maker	TE Connectivity	-	TE Connectivity	TE Connectivity	TE Connectivity	TE Connectivity	TE Connectivity

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