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MBM150GS12AW

Description
Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES
CategoryDiscrete semiconductor    The transistor   
File Size343KB,5 Pages
ManufacturerHitachi (Renesas )
Websitehttp://www.renesas.com/eng/
Download Datasheet Parametric View All

MBM150GS12AW Overview

Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES

MBM150GS12AW Parametric

Parameter NameAttribute value
MakerHitachi (Renesas )
package instructionFLANGE MOUNT, R-PUFM-X7
Reach Compliance Codeunknown
Maximum collector current (IC)150 A
Collector-emitter maximum voltage1200 V
Gate-emitter maximum voltage20 V
JESD-30 codeR-PUFM-X7
Number of components1
Number of terminals7
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Maximum power dissipation(Abs)800 W
Certification statusNot Qualified
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
VCEsat-Max3.4 V
Status List
M:Mass
production
A:Abolition
GR - A Series (Advanced GR Series)
Absolute Maximum Ratings
Connection
Type
V
CES
(V)
MBN1200GR12A
Single
MBN600GR12A
MBN400GR12A
MBM300GR12A
MBM200GR12A
Dual
MBM150GR12A
MBM100GR12A
1,200
1,200
150
100
1,000
690
2.2
2.2
1,200
1,200
1,200
1,200
1,200
I
C
(A)
1,200
600
400
300
200
P
C
(W)
8,330
3,790
2,500
1,980
1,250
V
CE(sat)
(V)Typ.
2.4
2.2
2.2
2.2
2.2
Date:Mar.2002
KS02007
Characteristics
t
on
(µs)Max.
2.1
0.8
0.7
0.7
0.6
0.6
0.6
t
off
(µs)Max.
1.8
1.2
1.1
1.1
1.0
1.0
1.0
t
f
(µs)Max.
0.4
0.35
0.3
0.3
0.3
0.3
0.3
N-7
N-6
N-5
M- 9
M- 8
M- 8
M- 8
M
M
M
M
M
M
M
Outline
Status
GR Series
Absolute Maximum Ratings
Connection
Type
V
CES
(V)
MBM400GR6
MBM300GR6
Dual
MBM200GR6
MBM150GR6
600
600
200
150
690
520
2.1
2.1
0.7
0.7
0.8
0.8
0.3
0.3
M- 8
M- 8
M
M
600
600
I
C
(A)
400
300
P
C
(W)
1,170
930
V
CE(sat)
(V)Typ.
2.1
2.1
Characteristics
t
on
(µs)Max.
0.7
0.7
t
off
(µs)Max.
1.1
1.0
t
f
(µs)Max.
0.32
0.32
M- 3
M- 8
M
M
Outline
Status
GS Series
Absolute Maximum Ratings
Connection
Type
V
CES
(V)
Dual
MBM600GS6CW
MBM400GS6AW
MBM400JS6AW
MBM300GS6AW
MBM200GS6AW
MBM150GS6AW
Six - Pack
MBB200GS6AW
600
600
600
600
600
600
600
I
C
(A)
600
400
400
300
200
150
200
P
C
(W)
1,700
1,000
1,470
800
600
450
600
V
CE(sat)
(V)Typ.
1.9
1.9
1.9
1.9
1.9
1.9
1.9
Characteristics
t
on
(µs)Max.
0.8
0.7
0.7
0.7
0.6
0.6
0.6
t
off
(µs)Max.
1.1
1.1
1.1
1.1
0.9
0.9
0.9
t
f
(µs)Max.
0.4
0.35
0.35
0.35
0.35
0.35
0.35
M- 7
M- 1
M- 3
M- 1
M- 6
M- 6
B-1
M
M
M
M
M
M
M
Outline
Status
1
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