MGFX35V9500-51 datasheet, PDF - EEWORLD Datasheet

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MGFX35V9500-51: DescriptionRF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET; CategoryDiscrete semiconductor The transistor; File Size283KB，6 Pages; ManufacturerMitsubishi; Websitehttp://www.mitsubishielectric.com/semiconductors/

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MGFX35V9500-51 Overview

RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET

MGFX35V9500-51 Parametric

Parameter Name	Attribute value
Maker	Mitsubishi
package instruction	FLANGE MOUNT, R-CDFM-F2
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	SOURCE
Configuration	SINGLE WITH BUILT-IN RESISTOR
Maximum drain current (ID)	2.8 A
FET technology	JUNCTION
highest frequency band	X BAND
JESD-30 code	R-CDFM-F2
Number of components	1
Number of terminals	2
Operating mode	DEPLETION MODE
Maximum operating temperature	175 °C
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Minimum power gain (Gp)	7.5 dB
Certification status	Not Qualified
surface mount	YES
Terminal form	FLAT
Terminal location	DUAL
transistor applications	AMPLIFIER
Transistor component materials	GALLIUM ARSENIDE

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MGFX35V9500-51 Related Products

	MGFX35V9500-51	MGFX35V0005-51	MGFX35V0510-51	MGFX35V1722-51
Description	RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET	RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET	RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET	RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET
Maker	Mitsubishi	Mitsubishi	Mitsubishi	Mitsubishi
package instruction	FLANGE MOUNT, R-CDFM-F2	FLANGE MOUNT, R-CDFM-F2	FLANGE MOUNT, R-CDFM-F2	FLANGE MOUNT, R-CDFM-F2
Reach Compliance Code	unknown	unknown	unknown	unknow
ECCN code	EAR99	EAR99	EAR99	EAR99
Shell connection	SOURCE	SOURCE	SOURCE	SOURCE
Configuration	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR
Maximum drain current (ID)	2.8 A	2.8 A	2.8 A	2.8 A
FET technology	JUNCTION	JUNCTION	JUNCTION	JUNCTION
highest frequency band	X BAND	X BAND	X BAND	X BAND
JESD-30 code	R-CDFM-F2	R-CDFM-F2	R-CDFM-F2	R-CDFM-F2
Number of components	1	1	1	1
Number of terminals	2	2	2	2
Operating mode	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE
Maximum operating temperature	175 °C	175 °C	175 °C	175 °C
Package body material	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Minimum power gain (Gp)	7.5 dB	7.5 dB	7 dB	6.5 dB
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES
Terminal form	FLAT	FLAT	FLAT	FLAT
Terminal location	DUAL	DUAL	DUAL	DUAL
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	GALLIUM ARSENIDE	GALLIUM ARSENIDE	GALLIUM ARSENIDE	GALLIUM ARSENIDE

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