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CM28C010-150/B

Description
EEPROM, 128KX8, 150ns, Parallel, CMOS, CDIP32
Categorystorage    storage   
File Size406KB,10 Pages
ManufacturerLSC/CSI
Websitehttps://lsicsi.com
Download Datasheet Parametric View All

CM28C010-150/B Overview

EEPROM, 128KX8, 150ns, Parallel, CMOS, CDIP32

CM28C010-150/B Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerLSC/CSI
package instructionDIP, DIP32,.6
Reach Compliance Codeunknown
ECCN code3A001.A.2.C
Maximum access time150 ns
Other featuresAUTOMATIC WRITE;PAGE WRITE;BULK ERASE
command user interfaceNO
Data pollingYES
Durability10000 Write/Erase Cycles
JESD-30 codeR-CDIP-T32
JESD-609 codee0
memory density1048576 bit
Memory IC TypeEEPROM
memory width8
Number of functions1
Number of terminals32
word count131072 words
character code128000
Operating modeASYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
organize128KX8
Output characteristics3-STATE
Package body materialCERAMIC, METAL-SEALED COFIRED
encapsulated codeDIP
Encapsulate equivalent codeDIP32,.6
Package shapeRECTANGULAR
Package formIN-LINE
page size128 words
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply5 V
Programming voltage5 V
Certification statusNot Qualified
Filter level38535Q/M;38534H;883B
Maximum standby current0.00085 A
Maximum slew rate0.12 mA
Maximum supply voltage (Vsup)5.25 V
Minimum supply voltage (Vsup)4.75 V
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyCMOS
Temperature levelMILITARY
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal pitch2.54 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
switch bitYES
Maximum write cycle time (tWC)10 ms
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