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1N5406

Description
3 A, 600 V, SILICON, RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size408KB,2 Pages
ManufacturerSSC
Websitehttp://www.siliconstandard.com/
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1N5406 Overview

3 A, 600 V, SILICON, RECTIFIER DIODE

1N5406 Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Processing package descriptionLEAD FREE, PLASTIC, CASE 267-05, 2 PIN
Lead-freeYes
EU RoHS regulationsYes
stateDISCONTINUED
packaging shaperound
Package SizeLONG FORM
Terminal formWire
terminal coatingMATTE Tin
Terminal locationAXIAL
Packaging MaterialsPlastic/Epoxy
structuresingle
Shell connectionisolation
Diode component materialssilicon
Diode typerectifier diode
applicationGENERAL PURPOSE
Phase1
Maximum repetitive peak reverse voltage600 V
Maximum average forward current3 A
Maximum non-repetitive peak forward current200 A
1N5400-1N5408
3A Silicon Rectifiers
PRODUCT SUMMARY
Voltage ratings available from 50 Volts to 1000 Volts
FEATURES
Low forward voltage drop
High current capability
High reliability
High surge current capability
DO-201AD
MECHANICAL DATA
Case: Molded plastic
Epoxy: UL 94V-O rate flame retardant
Lead: Axial leads,
matte tin plating
Polarit
y:
Color band denotes cathode end
High temperature soldering guaranteed:
260°C for 10 seconds with 0.375” (9.5mm)
lead lengths at 5 lbs. (2.3kg) tension
Weight: 1.2 grams
Pb-free; RoHS-compliant
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25°C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Parameter
Maximum
recurrent peak reverse voltage
Maximum RMS
voltage
Maximum DC
blocking voltage
Maximum
average forward rectified
current 0.375
(9.5mm)
lead length
at
T
A
= 75°C
Peak
forward surge current,
8.3 ms
single
half sine-wave superimposed
on
rated
load
(JEDEC method )
Maximum
instantaneous forward voltage
at
3.0A
Maximum DC
reverse current at
T
A
=25°C
at
rated
DC
blocking voltage at
T
A
=100°C
Maximum
full load reverse current, full
cycle average 0.5”(12.5mm) lead length
at
T
L
=90°C
Typical
junction capacitance
( Note 1 )
Typical
thermal resistance
( Note 2 )
Operating
temperature range
Storage
temperature range
Symbol
1N
5400
1N
5401
1N
5402
1N
5404
1N
5406
1N
5407
1N
5408
Units
V
V
V
A
A
V
uA
uA
uA
pF
°C/W
°C
°C
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
50
35
50
100
70
100
200
140
200
400
280
400
3.0
200
1.2
10.0
600
420
600
800 1000
560 700
800 1000
500
HT
IR
Cj
R
θ
T
J
T
STG
JA
500
30
20
-55 to +125
-55 to +150
Notes: 1. Measured at 1 MHz and
applied reverse voltage
of 4.0 V D.C.
2. Mounted
with 0.375" (9.5mm) lead length
on
copper
pads, size
20mm
x
20mm,
on P.C.B.
9/21/2006 Rev.4.01
www.SiliconStandard.com
1 of 2

1N5406 Related Products

1N5406 1N5404 1N5401 1N5400 1N5402 1N5407 1N5408
Description 3 A, 600 V, SILICON, RECTIFIER DIODE 3 A, 400 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 100 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, SILICON, RECTIFIER DIODE, DO-201AD RECTIFIER DIODE,1KV V(RRM),DO-204AE
Number of terminals 2 2 2 2 2 - -
Number of components 1 1 1 1 1 - -
Processing package description LEAD FREE, PLASTIC, CASE 267-05, 2 PIN GREEN, PLASTIC PACKAGE-2 PLASTIC PACKAGE-2 PLASTIC PACKAGE-2 PLASTIC PACKAGE-2 - -
state DISCONTINUED ACTIVE ACTIVE ACTIVE DISCONTINUED - CONSULT MFR
packaging shape round round round round round - -
Package Size LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM - -
Terminal form Wire Wire Wire Wire Wire - -
terminal coating MATTE Tin PURE Tin tin MATTE Tin tin lead - -
Terminal location AXIAL AXIAL AXIAL AXIAL AXIAL - -
Packaging Materials Plastic/Epoxy Plastic/Epoxy Plastic/Epoxy Plastic/Epoxy Plastic/Epoxy - -
structure single single single single single - -
Shell connection isolation isolation isolation isolation isolation - -
Diode component materials silicon silicon silicon silicon silicon - -
Diode type rectifier diode rectifier diode rectifier diode rectifier diode rectifier diode - rectifier diode
application GENERAL PURPOSE EFFICIENCY GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE - -
Phase 1 1 1 1 1 - -
Maximum repetitive peak reverse voltage 600 V 400 V 100 V 50 V 200 V - -
Maximum average forward current 3 A 3 A 3 A 3 A 3 A - -
Maximum non-repetitive peak forward current 200 A 200 A 200 A 200 A 200 A - -

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