BAV70LT1
Switching Diode
FEATURES
Power dissipation, P
D:
225 mW (Tamb=25℃)
Forward Current, I
F:
200 mA
Reverse Voltage, V
R
:70 V
Operating and storage junction temperature range:
T
J
,
T
stg
: -55℃ to +150℃
SOT-23 Plastic-Encapsulate package
Device Making: A4
ELECTRICAL CHARACTERISTICS
Note: Unless otherwise specified, these specifications apply over the operating ambient
temperature of 25℃.
12/20/2006 Rev. 1.00
www.SiliconStandard.com
1
BAV70LT1
Disclaimer
Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation
makes no guarantee or warranty, expressed or implied, as to the reliability, accuracy, timeliness or completeness of such
information and assumes no responsibility for its use, or for infringement of any patent or other intellectual property rights of
third parties that may result from its use. Silicon Standard reserves the right to make changes as it deems necessary to any
products described herein for any reason, including without limitation enhancement in reliability, functionality or design. No license
is granted, whether expressly or by implication, in relation to the use of any products described herein or to the use of any
information provided herein, under any patent or other intellectual property rights of Silicon Standard Corporation or any third parties.
12/20/2006 Rev. 1.00
www.SiliconStandard.com
2
Test/Measurement
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