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MBR2035CT

Description
10 A, 35 V, SILICON, RECTIFIER DIODE, TO-220AB
Categorysemiconductor    Discrete semiconductor   
File Size548KB,3 Pages
ManufacturerSSC
Websitehttp://www.siliconstandard.com/
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MBR2035CT Overview

10 A, 35 V, SILICON, RECTIFIER DIODE, TO-220AB

MBR2035CT Parametric

Parameter NameAttribute value
Number of terminals3
Number of components2
Processing package descriptionGREEN, PLASTIC PACKAGE-3
stateACTIVE
packaging shapeRECTANGULAR
Package SizeFLANGE MOUNT
Terminal formTHROUGH-HOLE
terminal coatingPURE TIN
Terminal locationSINGLE
Packaging MaterialsPLASTIC/EPOXY
CraftsmanshipSCHOTTKY
structureCOMMON CATHODE, 2 ELEMENTS
Shell connectionCATHODE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
applicationEFFICIENCY
Phase1
Maximum repetitive peak reverse voltage35 V
Maximum average forward current10 A
Maximum non-repetitive peak forward current150 A
MBR/B20xxCT Series
20A Dual Schottky Rectifiers
PRODUCT SUMMARY
Voltage ratings available from 35 to 60 Volts
FEATURES
Plastic packages have Underwriters Laboratory Flammability
Classification 94V-0
Dual rectifier construction, positive center tap
Metal-silicon junction, majority carrier conduction
Low power loss, high efficiency
Guardring for overvoltage protection
For use in low voltage, high frequency inverters, free wheeling,
and polarity protection applications
MECHANICAL DATA
High temperature soldering guaranteed:
250°C for 10 seconds, 0.25" (6.35mm) from case
Case: JEDEC TO-220AB (MBR...) or ITO-220AB (MBRB...) molded plastic body - for dimensions, see page 3
Terminals: Matte-Sn plated leads, solderable per MIL-STD-750, method 2026
Polarity: As marked
Mounting Position: Any
Mounting Torque: 10 in-lbs maximum
Weight: 0.08 ounce, 2.24 grams
Pb-free; RoHS-compliant
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25°C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Parameter
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward
rectified current at
T
C
=135°C
Total device
Per leg
Symbol
V
RRM
V
RWM
V
DC
I
F(AV)
I
FRM
I
FSM
I
RRM
dv/dt
MBR2035CT MBR2045CT MBR2050CT MBR2060CT
MBRB2035CT
MBRB2045CT
MBRB2050CT MBRB2060CT
Units
Volts
Volts
Volts
Amps
Amps
Amps
35
35
35
45
45
45
20
10
20
150
1.0
10,000
50
50
50
60
60
60
Peak repetitive forward current per leg at (rated V
R
, sq.
wave, 20kHz) at T
C
=135
o
C
Peak forward surge current 8.3ms single half sine-wave
superimposed on rated load (JEDEC Method) per leg
Peak repetitive reverse surge current per leg at t
p
=
2.0
u
s, 1KHz
Voltage rate of change (rated V
R
)
Maximum instantaneous forward voltage per leg (Note
1)
at I
F
=10A, T
C
=25
o
C
at I
F
=10A, T
C
=125 C
at I
F
=20A, T
C
=25 C
at I
F
=20A, T
C
=125 C
Maximum reverse current at
rated DC blocking voltage
per leg (Note
1)
T
C
=25 C
T
C
=125
o
C
o
o
o
o
0.5
Amps
V/
us
-
V
F
0.57
0.84
0.72
0.1
I
R
15
R
θ
JC
2.0
0.80
0.70
0.95
0.85
0.15
mA
150
°C
/W
Volt
Thermal resistance from junction to case per leg
Operating junction temperature range
Storage temperature range
Notes:
1. Pulse test: 300us pulse width, 1% duty cycle
T
J
T
STG
-55 to +150
-55 to +150
o
C
C
o
12/03/2006 Rev.4.01
www.SiliconStandard.com
1 of 3

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