AMMP-6522
7 to 20 GHz GaAs MMIC LNA/IRM Receiver
in SMT Package
Data Sheet
Description
Avago’s AMMP-6522 is an easy-to-use broadband inte-
grated receiver in a surface mount package. The MMIC
includes a 3-stage LNA to provide gain amplification
and a gate-pumped image-reject mixer for frequency
translation. The overall receiver performs Single Side
Band down-conversion in the 7 to 20 GHz RF signal
range. The LO and RF are matched to 50 Ω. The IF
output is provided in 2-port format where an external
90-degree hybrid can be utilized for full image rejection.
The LNA requires a 4 V, 75 mA power supply, where the
mixer bias is a simple -1 V, 0.1 mA. The MMIC is fabricated
using PHEMT technology. The surface mount package
allows elimination of “chip & wire” assembly for lower
cost. This MMIC is a cost effective alternative to multi-
chip solution that have higher loss and complex assem-
bly.
Features
•
•
•
•
•
5x5 mm Surface Mount Package
Integrated Low Noise Amplifier
Integrated Image Reject Mixer
50 Ω Input and Output Match
Single Supply Bias Pin
Specifications Vd = 4.0 V (75 mA), Vg = -1.0 V (0.1 mA)
•
RF frequency: 7 to 20 GHz
•
IF frequency: DC to 3.5 GHz
•
Conversion Gain (RF/IF): 13 dB
•
Input Intercept Point: -4 dBm
•
Image Suppression: 15 dB
•
Total Noise Figure: 2.4 dB
Application
•
Microwave radio systems
•
Satellite VSAT, DBS Up/Down Link
•
LMDS & Pt-Pt mmW Long Haul
•
Broadband Wireless Access (including 802.16 and
802.20 WiMax)
•
WLL and MMDS loops
Package Diagram
IF1
1
NC
2
IF2
3
RF
8
4
LO
Functional Block Diagram
1
2
3
PIN
1
2
3
4
5
6
7
8
FUNCTION
IF1
NC
IF2
LO
Vg
NC
Vd
RF
7
Vd
6
NC
5
Vg
8
4
7
6
5
TOP VIEW
PACKAGE BASE: GND
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model (Class A) :40V
ESD Human Body Model (Class 1A) :150V
Refer to Avago Technologies Application Note A004R:
Electrostatic Discharge, Damage and Control.
Note: MSL Rating = Level 2A
Electrical Specifications
1. Small/Large -signal data measured in a fully de-embedded test fixture form TA = 25°C.
2. Pre-assembly into package performance verified 100% on-wafer per AMMC-6522 published specifications.
3. This final package part performance is verified by a functional test correlated to actual performance at one or more
frequencies.
4. Specifications are derived from measurements in a 50 Ω test environment. Aspects of the amplifier performance
may be improved over a more narrow bandwidth by application of additional conjugate, linearity, or low noise
(Гopt) matching.
5. NF is measure on-wafer. Additional bond wires (-0.2nH) at Input could improve NF at some frequencies.
Table 1. RF Electrical Characteristics
TA=25°C, Vd=4.0V, Vg=-1V, Zo=50 Ω, LO=+15dBm, IF=2GHz
[1]
RF=8GHz, LO=10GHz
Parameter
Noise Figure into 50 Ω, NF
Conversion Gain, CG
Input Third Order Intercept, IIP3
Image Rejection, Sup
12
-8
15
RF=18GHz, LO=20GHz
Min
12
-5
15
Min
Typ
2.6
13
-6
29
Max
3.3
Typ
3
14
-0.4
30
Max
3.3
Unit
dB
dB
dBm
dB
Comment
Note:
1. All tested parameters are guaranteed with the following measurement accuracy:
RF=8GHz:
±0.6dB
for Conversion Gain,
±10dB
for IRR,
±0.5dB
for NF,
±0.8dBm
for IIP3
RF=18GHz:
±1.8dB
for Conversion Gain,
±1.6dB
for IRR,
±0.6dB
for NF,
±1.7dBm
for IIP3
Table 2. Recommended Operating Range
1. Ambient operational temperature TA = 25°C unless otherwise noted.
2. Channel-to-backside Thermal Resistance (Tchannel (Tch) = 34°C) as measured using infrared microscopy. Thermal
Resistance at backside temperature (Tb) = 25°C calculated from measured data.
Description
Drain Supply Current, Id
Drain Supply Voltage, Vd
Gate Supply Voltage, Vg
RF Frequency, RFfreq
LO Frequency, LOfreq
IF Frequency, IFfreq
[1]
LO Drive Power, LO
3
-1.2
7
5
DC
+10
+15
Min.
Typical
75
4
-1.0
Max.
95
5
-0.8
20
22
3.5
+22
Unit
mA
V
V
GHz
GHz
GHz
dBm
Comments
Vd = 4.0 V
Ig = 0.1mA
Note:
1. Use IF = DC with caution. Please see “Biasing and Operation” for more details.
2
Table 3. Thermal Properties
Parameter
Thermal Resistance,
qjc
Test Conditions
Ambient operational temperature TA = 25°C
Channel-to-backside Thermal Resistance Tchannel(Tch)=34°C
Thermal Resistance at backside temperature Tb=25°C
Value
qjc
= 27 °C/W
Absolute Minimum and Maximum Ratings
Table 4. Minimum and Maximum Ratings
Description Pin
Drain to Ground Supply Voltage, Vd
Gate to Ground Voltage, Vg
Drain Current , Id
Gate Current, Ig
RF CW Input Power, Pin
Channel Temperature, Tch
Storage Temperature, Tstg
Maximum Assembly Temperature, Tmax
-65
Min.
Max.
5.5
+0.8
100
1
10
+150
+150
260
Unit
V
V
mA
mA
dBm
°C
°C
°C
Comments
CW
20 second maximum
Notes:
1. Operation in excess of any one of these conditions may result in permanent damage to this device.
3
AMMP-6522 Typical Performance
[1,2]
(T
A
= 25°C, Vd = 4 V, Id = 75 mA, V
g
= -1 V, I
g
= 0 mA, Z
in
= Z
out
= 50 Ω), IF Freq = 2 GHz,
LO Power = +15 dBm unless noted)
20
5
4
NOISE FIGURE (dB)
20
LSB
USB
0
3
2
1
0
10
CONV GAIN (dB)
-10
-20
6
8
10
12
14
16
18
6
8
10
12
14
16
18
20
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 1. Receiver conversion gain
0
Figure 2. Typical noise figure
5
RETURN LOSS (dB)
-10
IIP3 (dBm)
-20
RF
LO
-30
0
10
20
30
40
50
0
-5
-10
6
8
10
12
14
16
18
20
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 3. Return loss at RF & LO ports
20
Figure 4. Typical input IP3
0
-5
CONV GAIN (dB)
10
LSB
USB
0
IIP3 (dBm)
18
-10
-15
-10
-6
-2
2
6
LO POWER (dBm)
10
14
-20
-5
0
5
10
15
20
LO POWER (dBm)
Figure 5. Conv gain vs. LO power (RF = 15 GHz)
20
Figure 6. Input IP3 vs. LO power (RF = 15 GHz)
2
0
15
CONV GAIN (dB)
-2
10
IF = 1 GHz
IF = 2 GHz
IIP3 (dBm)
-4
-6
-8
20
-10
6
8
10
12
14
16
IF = 1 GHz
IF = 2 GHz
18
20
5
0
6
8
10
12
14
16
18
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 7. LSB conversion gain at two IF frequencies
4
Figure 8. Input IP3 at two IF frequencies
AMMP-6522 Typical Performance (cont.)
[1,2]
18
(T
A
= 25°C, Vd = 4 V, Id = 75 mA, V
g
= -1 V, I
g
= 0 mA, Z
in
= Z
out
= 50 Ω), IF Freq = 2 GHz, LO Power = +15 dBm unless
noted)
2
0
16
INPUT IP3 (dBm)
CONV GAIN (dB)
-2
-4
-6
-8
18
20
-10
6
8
10
12
14
16
Vg = -1.2 V
Vg = -1.1 V
Vg = -1.0 V
Vg = -0.9 V
18
20
14
Vg = -1.2 V
Vg = -1.1 V
Vg = -1.0 V
Vg = -0.9 V
6
8
10
12
14
16
12
10
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 9. Conversion gain over Vg
20
Figure 10. Input IP3 over Vga
5
4
NOISE FIGURE (dB)
3
2
1
0
4V
3V
5V
6
8
10
12
14
16
18
20
15
CONV GAIN (dB)
10
4V
3V
5V
6
8
10
12
14
16
18
20
5
0
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 11. Receiver conversion gain over Vd
0
Figure 12. Noise figure over Vd
5
RETURN LOSS (dB)
-10
IIP3 (dBm)
0
-20
25C
-40C
85C
0
10
20
30
40
50
-5
4V
3V
5V
6
8
10
12
14
16
18
20
-30
-10
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 13. Return loss at RF over temperature
0
25C
-40C
85C
-10
Figure 14. Input IP3 over Vd
5
4
NOISE FIGURE (dB)
3
2
1
25C
-40C
85C
LO RETURN LOSS (dB)
-20
-30
0
10
20
30
40
50
0
6
8
10
12
14
16
18
20
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 15. Return loss at LO over temperature
Figure 16. Noise figure over temperature
Notes:
1. S-parameters are measured with R&D Eval Board as shown in Figure 19. Board and connector effects are included in the data.
2. Noise Figure is measured with R&D Eval Board as shown in Figure 19, and with a 3-dB pad at input. Board and connector losses are already de-
embeded from the data.
5
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