LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
•
•
Applications
Inverter, Interface, Driver
3
LDTA115GLT1G
Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation,
making the device design easy.
We declare that the material of product compliance with
RoHS requirements.
1
2
SOT-23
•
Absolute maximum ratings
(Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
Pc
Tj
Tstg
Limits
−50
−50
−5
−100
200
150
−55
to
+150
Unit
V
V
V
mA
mW
°C
°C
1
BASE
3
COLLECTOR
R2
2
EMITTER
DEVICE MARKING AND RESISTOR VALUES
Device
LDTA115GLT1G
LDTA115GLT3G
Marking
Q4
Q4
R1 (K)
−
−
R2 (K)
100
100
Shipping
3000/Tape & Reel
10000/Tape & Reel
Electrical characteristics
(Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Emitter-base resistance
Transition frequency
∗
Transition
frequency of the device.
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
R2
f
T
Min.
−50
−50
−5
−
−30
−
82
70
−
Typ.
−
−
−
−
−
−
−
100
250
Max.
−
−
−
−0.5
−58
−0.3
−
130
−
Unit
V
V
V
µA
µA
V
−
kΩ
MHz
I
C
= −50 µA
I
C
= −1mA
I
E
= −72 µA
V
CB
= −50V
Conditions
V
EB
= −4V
I
C
= −5mA,
I
B
= −0.25mA
I
C
= −5mA,
V
CE
= −5V
−
V
CE
= −10V,
I
E
=5mA,
f=100MHz
∗
1/3
LESHAN RADIO COMPANY, LTD.
LDTA115GLT1G
Electrical characteristic curves
1k
500
DC CURRENT GAIN : h
FE
V
CE
=5V
Ta=25°C
200
100
50
20
10
5
2
1
10µ 20µ
50µ 100µ 200µ 500µ 1m 2m
COLLECTOR CURRENT : I
C
(A)
5m 10m
Ta=100°C
Ta=
−40°C
Fig.1 DC current gain
vs. Collector current
COLLECTOR SATURATION VOLTAGE : V
CE
(
sat
) (V)
1
500m
200m
100m
50m
20m
10m
5m
2m
1m
I
C
/I
B
=20/1
Ta=100°C
Ta=25°C
Ta=
−40°C
10µ 20µ
50µ 100µ 200µ 500µ 1m 2m
COLLECTOR CURRENT : I
C
(A)
5m 10m
Fig.2 Collector-Emitter saturation voltage
vs. Collector current
2/3
LESHAN RADIO COMPANY, LTD.
LDTA115GLT1G
SOT-23
NOTES:
A
L
3
1
V
G
2
B S
DIM
A
B
C
D
G
H
J
J
K
L
S
V
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M,1982
2. CONTROLLING DIMENSION: INCH.
INCHES
MIN
MAX
0.1102
0.1197
0.0472
0.0551
0.0350
0.0440
0.0150
0.0200
0.0701
0.0807
0.0005
0.0040
0.0034
0.0140
0.0350
0.0830
0.0177
0.0070
0.0285
0.0401
0.1039
0.0236
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.100
0.085
0.35
0.89
2.10
0.45
0.177
0.69
1.02
2.64
0.60
C
D
H
K
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
3/3
Embedded System
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