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DTA115GSA

Description
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon,
CategoryDiscrete semiconductor    The transistor   
File Size41KB,2 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance  
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DTA115GSA Overview

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon,

DTA115GSA Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerROHM Semiconductor
package instructionIN-LINE, R-PSIP-T3
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresDIGITAL
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)82
JESD-30 codeR-PSIP-T3
JESD-609 codee1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typePNP
Maximum power dissipation(Abs)0.3 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN SILVER COPPER
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperature10
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)250 MHz
VCEsat-Max0.3 V
DTA115GUA / DTA115GKA / DTA115GSA
Transistors
Digital transistors (built-in resistor)
DTA115GUA / DTA115GKA / DTA115GSA
Features
1) The built-in bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input, and
parasitic effects are almost completely eliminated.
2) Only the on / off conditions need to be set for operation,
making device design easy.
3) Higher mounting densities can be achieved.
External dimensions
(Unit : mm)
0.65 0.65
0.7
0.8
0
~
0.1
DTA115GUA
0.3
(3)
(1)
1.25
2.1
0.15
0.2
(2)
0.1Min.
0~0.1
Each lead has same dimensions
Equivalent circuit
B
R
ROHM : UMT3
EIAJ : SC-70
(1) Emitter
(2) Base
(3) Collector
(1)
C
DTA115GKA
E
E : Emitter
C : Collector
B : Base
0.4
(3)
1.6
2.8
0.15
Absolute maximum ratings
(Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltag
Emitter-base voltage
Collector current
Collector power
dissipation
DTA115GUA / DTA115GKA
DTA115GSA
Symbol
V
CBO
V
CEO
V
EBO
I
C
Pc
Tj
Tstg
Limits
−50
−50
−5
−100
200
300
150
−55
to
+150
Unit
V
V
V
mA
mW
mW
°C
°C
0.3Min.
Each lead has same dimensions
ROHM : SMT3
EIAJ : SC-59
(1) Emitter
(2) Base
(3) Collector
2
3
Junction temperature
Storage temperature
DTA115GSA
4
(15Min.)
Package, marking, and packaging specifications
Type
Package
Marking
Packaging code
Basic ordering unit (pieces)
DTA115GUA
UMT3
K19
T106
3000
DTA115GKA
SMT3
K19
T146
3000
DTA115GSA
SPT
TP
5000
3Min.
0.45
2.5
5
(1) (2) (3)
0.5 0.45
Taping specifications
ROHM : SPT
EIAJ : SC-72
(1) Emitter
(2) Collector
(3) Base
Electrical characteristics
(Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltag
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current
transfer ratio
Emitter-base resistance
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
R
f
T
Min.
−50
−50
−5
82
70
Typ.
100
250
Max.
−0.5
−58
−0.3
130
Unit
V
V
V
µA
µA
V
kΩ
MHz
I
C
=−50µA
I
C
=−1mA
I
E
=−72µA
V
CB
=−50V
V
EB
=−4V
I
C
=−5mA,
I
B
=−0.25mA
I
C
=−5mA,
V
CE
=−5V
V
CE
=−10V,
I
E
=5mA,
f=100MHz
Conditions
Transition frequency
Transition
frequency of the device.
1.1
0.95 0.95
1.9
2.9
(2)
0.9
1.3
2.0
1/1

DTA115GSA Related Products

DTA115GSA DTA115GSATP
Description Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SPT, SC-72, 3 PIN
Is it Rohs certified? conform to conform to
Maker ROHM Semiconductor ROHM Semiconductor
package instruction IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3
Reach Compliance Code compliant unknown
ECCN code EAR99 EAR99
Other features DIGITAL BUILT-IN BIAS RESISTOR
Maximum collector current (IC) 0.1 A 0.1 A
Collector-emitter maximum voltage 50 V 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE) 82 82
JESD-30 code R-PSIP-T3 R-PSIP-T3
Number of components 1 1
Number of terminals 3 3
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form IN-LINE IN-LINE
Peak Reflow Temperature (Celsius) 260 NOT SPECIFIED
Polarity/channel type PNP PNP
Maximum power dissipation(Abs) 0.3 W 0.3 W
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature 10 NOT SPECIFIED
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 250 MHz 250 MHz
VCEsat-Max 0.3 V 0.3 V

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