DTA124T series
PNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors)
Datasheet
AEC-Q101 Qualified
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Outline
Parameter
V
CEO
I
C
R
1
Value
-50V
-100mA
22kΩ
VMT3
EMT3
DTA124TMFHA
DTA124TM
(SC-105AA)
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Features
1) Built-In Biasing Resistor
2) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors (see inner circuit) .
3) The bias resistors consist of thin-film resistors
with complete isolation to allow negative biasing
of the input. They also have the advantage of
completely eliminating parasitic effects.
4) Only the on/off conditions need to be set
for operation, making the circuit design easy.
5) Complementary NPN Types: DTC124T series
6) Lead Free/RoHS Compliant.
Driver circuit
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Application
Switching circuit, Inverter circuit, Interface circuit,
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Packaging specifications
Part No.
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UMT3
SMT3
DTA124TUA
DTA124TUAFRA
SOT-323(SC-70)
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Inner circuit
B: BASE
C: COLLECTOR
E: EMITTER
Package
VMT3
EMT3
UMT3
SMT3
Package
size
1212
1616
2021
2928
Taping
code
T2L
TL
T106
T146
Reel size Tape width
(mm)
(mm)
180
180
180
180
8
8
8
8
DTA124TMFHA
DTA124TM
DTA124TEFRA
DTA124TE
DTA124TUAFRA
DTA124TUA
DTA124TKAFRA
DTA124TKA
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© 2012 ROHM Co., Ltd. All rights reserved.
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or
DTA124TEFRA
DTA124TE
SOT-416(SC-75A)
DTA124TKA
DTA124TKAFRA
SOT-346(SC-59)
Basic
ordering
unit.(pcs)
8000
3000
3000
3000
Marking
95
95
95
95
20121023 - Rev.001
DTA124T series
Datasheet
l
Absolute maximum ratings
(T
a
= 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DTA124TMFHA
DTA124TM
DTA124TEFRA
DTA124TE
Symbol
V
CBO
V
CEO
V
EBO
I
C
Values
-50
-50
-5
-100
150
150
200
200
150
Unit
V
V
V
mA
Power dissipation
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DTA124TUAFRA
DTA124TUA
P
D*1
DTA124TKA
DTA124TKAFRA
Junction temperature
T
j
Range of storage temperature
T
stg
-55 to +150
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Electrical characteristics
(T
a
= 25°C)
Parameter
Symbol
BV
CBO
Conditions
Min.
-50
Collector-base breakdown
voltage
I
C
= -50μA
I
C
= -1mA
Collector-emitter breakdown
voltage
BV
CEO
BV
EBO
I
CBO
I
EBO
-50
-5
-
Emitter-base breakdown voltage
I
E
= -50μA
R
Collector cut-off current
Emitter cut-off current
V
CB
= -50V
V
EB
= -4V
-
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ot
Collector-emitter saturation voltage
V
CE(sat)
h
FE
R
1
f
T*2
I
C
/ I
B
= -5mA / -0.5mA
-
DC current gain
V
CE
= -5V, I
C
= -1mA
-
V
CE
= -10V, I
E
= 5mA,
f = 100MHz
100
15.4
-
or
Values
Typ.
-
Max.
-
-
-
-
-
-
-0.5
-0.5
-
-
-0.3
600
28.6
-
250
22
250
mW
℃
℃
Unit
V
V
V
μA
μA
V
-
kΩ
MHz
Input resistance
Transition frequency
*1 Each terminal mounted on a reference footprint
*2 Characteristics of built-in transistor
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20121023 - Rev.001
DTA124T series
Datasheet
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Electrical characteristic curves(Ta=25
℃
)
Fig.1 Grounded emitter propagation characteristics
Fig.2 Grounded emitter output characteristics
Fig.3 DC Current gain vs. Collector Current
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© 2012 ROHM Co., Ltd. All rights reserved.
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Fig.4 Collector-emitter saturation voltage vs.
Collector Current
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20121023 - Rev.001
DTA124T series
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Dimensions
Datasheet
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© 2012 ROHM Co., Ltd. All rights reserved.
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20121023 - Rev.001
DTA124T series
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Dimensions
Datasheet
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© 2012 ROHM Co., Ltd. All rights reserved.
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20121023 - Rev.001
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