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HM1-6516/883

Description
Standard SRAM, 2KX8, 200ns, CMOS, CDIP24
Categorystorage    storage   
File Size194KB,8 Pages
ManufacturerHarris
Websitehttp://www.harris.com/
Download Datasheet Parametric Compare View All

HM1-6516/883 Overview

Standard SRAM, 2KX8, 200ns, CMOS, CDIP24

HM1-6516/883 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerHarris
package instructionDIP, DIP24,.6
Reach Compliance Codeunknown
ECCN code3A001.A.2.C
Maximum access time200 ns
Other featuresADDRESS LATCH
I/O typeCOMMON
JESD-30 codeR-GDIP-T24
JESD-609 codee0
memory density16384 bit
Memory IC TypeSTANDARD SRAM
memory width8
Number of functions1
Number of ports1
Number of terminals24
word count2048 words
character code2000
Operating modeASYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
organize2KX8
Output characteristics3-STATE
ExportableYES
Package body materialCERAMIC, GLASS-SEALED
encapsulated codeDIP
Encapsulate equivalent codeDIP24,.6
Package shapeRECTANGULAR
Package formIN-LINE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply5 V
Certification statusNot Qualified
Filter level38535Q/M;38534H;883B
Maximum standby current0.00005 A
Minimum standby current2 V
Maximum slew rate0.014 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyCMOS
Temperature levelMILITARY
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal pitch2.54 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED

HM1-6516/883 Related Products

HM1-6516/883 HM1-6516B/883 HM4-6516B/883
Description Standard SRAM, 2KX8, 200ns, CMOS, CDIP24 Standard SRAM, 2KX8, 120ns, CMOS, CDIP24 Standard SRAM, 2KX8, 120ns, CMOS, CQCC32
Is it Rohs certified? incompatible incompatible incompatible
Maker Harris Harris Harris
package instruction DIP, DIP24,.6 DIP, DIP24,.6 QCCN, LCC32,.45X.55
Reach Compliance Code unknown unknown unknown
ECCN code 3A001.A.2.C 3A001.A.2.C 3A001.A.2.C
Maximum access time 200 ns 120 ns 120 ns
Other features ADDRESS LATCH ADDRESS LATCH ADDRESS LATCH
I/O type COMMON COMMON COMMON
JESD-30 code R-GDIP-T24 R-GDIP-T24 R-CQCC-N32
JESD-609 code e0 e0 e0
memory density 16384 bit 16384 bit 16384 bit
Memory IC Type STANDARD SRAM STANDARD SRAM STANDARD SRAM
memory width 8 8 8
Number of functions 1 1 1
Number of ports 1 1 1
Number of terminals 24 24 32
word count 2048 words 2048 words 2048 words
character code 2000 2000 2000
Operating mode ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
Maximum operating temperature 125 °C 125 °C 125 °C
Minimum operating temperature -55 °C -55 °C -55 °C
organize 2KX8 2KX8 2KX8
Output characteristics 3-STATE 3-STATE 3-STATE
Exportable YES YES YES
Package body material CERAMIC, GLASS-SEALED CERAMIC, GLASS-SEALED CERAMIC, METAL-SEALED COFIRED
encapsulated code DIP DIP QCCN
Encapsulate equivalent code DIP24,.6 DIP24,.6 LCC32,.45X.55
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form IN-LINE IN-LINE CHIP CARRIER
Parallel/Serial PARALLEL PARALLEL PARALLEL
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
power supply 5 V 5 V 5 V
Certification status Not Qualified Not Qualified Not Qualified
Filter level 38535Q/M;38534H;883B 38535Q/M;38534H;883B 38535Q/M;38534H;883B
Maximum standby current 0.00005 A 0.000025 A 0.000025 A
Minimum standby current 2 V 2 V 2 V
Maximum slew rate 0.014 mA 0.017 mA 0.017 mA
Maximum supply voltage (Vsup) 5.5 V 5.5 V 5.5 V
Minimum supply voltage (Vsup) 4.5 V 4.5 V 4.5 V
Nominal supply voltage (Vsup) 5 V 5 V 5 V
surface mount NO NO YES
technology CMOS CMOS CMOS
Temperature level MILITARY MILITARY MILITARY
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form THROUGH-HOLE THROUGH-HOLE NO LEAD
Terminal pitch 2.54 mm 2.54 mm 1.27 mm
Terminal location DUAL DUAL QUAD
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
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