DTA125TUA / DTA125TKA / DTA125TSA
Transistors
-100mA / -50V Digital transistor
(with built-in resistors)
DTA125TUA / DTA125TKA / DTA125TSA
Applications
Inverter, Interface, Driver
External dimensions
(Unit : mm)
DTA125TUA
2.0
0.3
0.9
0.2
0.7
Features
1) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors.
2) The bias resistors consist of thin-film resistors
with complete isolation to allow positive biasing of
the input, and parasitic effects are almost
completely eliminated.
3) Only the on / off conditions need to be set for
operation, making the device design easy.
4) Higher mounting densities can be achieved.
(3)
1.25
(2)
(1)
2.1
0.65 0.65
ROHM : UMT3
EIAJ : SC-70
1.3
0.15
0.1Min.
(1) Emitter
(2) Base
(3) Collector
Abbreviated symbol : 9A
Each lead has same dimensions
DTA125TKA
2.9
0.4
(3)
1.6
2.8
1.1
0.8
Structure
PNP epitaxial planar silicon transistor
(Resistor built-in type)
ROHM : SMT3
EIAJ : SC-59
(2)
(1)
0.95 0.95
0.15
0.3Min.
1.9
Abbreviated symbol : 9A
(1) Emitter
(2) Base
(3) Collector
Each lead has same dimensions
Packaging specifications
Package
Packaging type
Code
Part No. Basic ordering unit (pieces)
DTA125TUA
DTA125TKA
DTA125TSA
UMT3 SMT3
SPT
Taping Taping Taping
T106
T146
TP
3000
3000
5000
−
−
−
−
−
−
DTA125TSA
3.0
4.0
2.0
(15Min.)
3Min.
0.45
2.5
5.0
(1) (2) (3)
0.5
0.45
Equivalent circuit
ROHM : SPT
EIAJ : SC-72
Abbreviated symbol : A125TS
(1) Emitter
(2) Collector
(3) Base
B
R
1
C
E
E : Emitter
C : Collector
B : Base
R
1
=200kΩ
Rev.B
1/2
DTA125TUA / DTA125TKA / DTA125TSA
Transistors
Absolute maximum ratings
(Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power DTA125TUA / DTA125TKA
dissipation
DTA125TSA
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
Pc
Tj
Tstg
Limits
−50
−50
−5
−100
200
300
150
−55
to
+150
Unit
V
V
V
mA
mW
°C
°C
Electrical characteristics
(Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current
transfer ratio
Input resistance
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
R
1
f
T
∗
Min.
−50
−50
−5
−
−
−
100
140
−
Typ.
−
−
−
−
−
−
250
200
250
Max.
−
−
−
−0.5
−0.5
−0.3
600
260
−
Unit
V
V
V
µA
µA
V
−
kΩ
MHz
I
C
= −50µA
I
C
= −1mA
I
E
= −50µA
V
CB
= −50V
V
EB
= −4V
I
C
= −0.5mA
, I
B
= −0.05mA
I
C
= −1mA
, V
CE
= −5V
−
V
CE
= −10V
, I
E
=5mA
, f=100MHz
Conditions
Transition frequency
∗
Characteristics of built-in transistor
Electrical characteristics curves
1k
500
COLLECTOR SATURATION VOLTAGE : V
CE
(sat) (V)
V
CE
=5V
1
500m
200m
100m
50m
Ta=100°C
Ta=25°C
I
C
/I
B
=10/1
DC CURRENT GAIN : h
FE
200
100
50
20
10
5
2
1
10µ
20µ
50µ 100µ 200µ
500µ 1m
2m
5m
10m
Ta=
−40°C
Ta=100°C
Ta=25°C
Ta=
−40°C
20m
10m
5m
2m
1m
10µ
20µ
50µ 100µ 200µ
500µ 1m
2m
5m
10m
COLLECTOR CURRENT : I
C
(A)
COLLECTOR CURRENT : I
C
(A)
Fig.1 DC current gain
vs. Collector current
Fig.2 Collector-Emitter saturation voltage
vs. Collector current
Rev.B
2/2
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
Embedded System
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