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B5817WS_1

Description
1 A, 20 V, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size621KB,4 Pages
ManufacturerSY
Websitehttp://www.shunyegroup.com/
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B5817WS_1 Overview

1 A, 20 V, SILICON, SIGNAL DIODE

Schottky Barrier Diode
FEATURES
Extremely low V
F
.
Low stored change,majority carrier
conduction.
Low power loss/high efficient
B5817WS-B5819WS
Pb
Lead-free
APPLICATIONS
For Use In Low Voltage, High Frequency Inverters.
Free Wheeling, And Polarity Protection Applications.
SOD-323
ORDERING INFORMATION
Type No.
B5817WS
B5818WS
B5819WS
Marking
SJ
SK
SL
Package Code
SOD-323
SOD-323
SOD-323
MAXIMUM RATING
@ Ta=25℃ unless otherwise specified
Parameter
Non-Repetitive Peak reverse voltage
Peak repetitive Peak reverse voltage
Working Peak Reverse voltage
DC Reverse Voltage
RMS Reverse Voltage
Average Rectified output Current
Peak forward surge current@=8.3ms
Repetitive Peak Forward Current
Power Dissipation
Thermal Resistance Junction to Ambient
Storage temperature
symbol
V
RM
V
RRM
V
RWM
V
R
V
R(RMS)
I
o
I
FSM
I
FRM
P
d
R
θJA
T
STG
B5817WS
20
B5818WS
30
B5819WS
40
Unit
V
20
30
40
V
14
1
25
625
250
500
-65~+150
21
28
V
A
A
mA
mW
℃/W
www.shunyegroup.com

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B5817WS_1 B5817WS B5818WS B5819WS
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