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BA158

Description
1 A, 600 V, SILICON, SIGNAL DIODE, DO-204AL
Categorysemiconductor    Discrete semiconductor   
File Size255KB,2 Pages
ManufacturerSY
Websitehttp://www.shunyegroup.com/
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BA158 Overview

1 A, 600 V, SILICON, SIGNAL DIODE, DO-204AL

1N4933 THRU 1N4937
FAST RECOVERY RECTIFIERS
Reverse Voltage -
50 to 600 Volts
DO-41
Forward Current -
1.0 Ampere
FEATURES
1.0 (25.4)
MIN.
0.107(2.7)
0.080(2.0)
DIA.
0.205(5.2)
0.166(4.2)
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
Fast switching for high efficiency
Low reverse leakage
High forward surge current capability
High temperature soldering guaranteed:
250 C/10 seconds,0.375
(9.5mm) lead length,
5 lbs. (2.3kg) tension
MECHANICAL DATA
1.0 (25.4)
MIN.
0.034(0.9)
0.028(0.7)
DIA.
Dimensions in inches and (millimeters)
Case:
DO-41 molded plastic body
Terminals:
Plated axial leads, solderable per MIL-STD-750,
Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:0.012
ounce, 0.33 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
SYMBOLS
1N
4933
1N
4934
1N
4935
1N
4936
1N
4937
UNITS
VOLTS
VOLTS
VOLTS
Amp
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375”(9.5mm) lead length at T
A
=75 C
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 1.0A
Maximum DC reverse current
T
A
=25 C
at rated DC blocking voltage
T
A
=100 C
Maximum reverse recovery time
(NOTE 1)
Typical junction capacitance (NOTE 2)
Typical thermal resistance (NOTE 3)
Operating junction and storage temperature range
V
RRM
V
RMS
V
DC
I
(AV)
50
35
50
100
70
100
200
140
200
1.0
400
280
400
600
420
600
I
FSM
V
F
I
R
t
rr
C
J
R
q
JA
T
J
,
T
STG
30.0
1.2
5.0
50.0
200
15.0
50.0
-65 to +150
Amps
Volts
u
A
ns
pF
C/W
C
Note:1.Reverse
recovery condition I
F
=0.5A,I
R
=1.0A,Irr=0.25A
2.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
3.Thermal resistance from junction to ambient at 0.375”(9.5mm)lead length,P.C.B. mounted
www.shunyegroup.com

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BA158 1N4933 1N4934 1N4935 1N4937 1N4936 BA157 BA159
Description 1 A, 600 V, SILICON, SIGNAL DIODE, DO-204AL 1 A, 50 V, SILICON, SIGNAL DIODE 1 A, 100 V, SILICON, SIGNAL DIODE 1 A, 200 V, SILICON, SIGNAL DIODE, DO-41 1 A, 600 V, SILICON, SIGNAL DIODE, DO-41 1 A, 400 V, SILICON, SIGNAL DIODE, DO-204AL 1 A, 400 V, SILICON, SIGNAL DIODE, DO-41 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41
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