ZMV835B datasheet, PDF - EEWORLD Datasheet

ZMV835B: DescriptionVariable Capacitance Diode, 68pF C(T), 25V, Silicon; CategoryDiscrete semiconductor diode; File Size44KB，2 Pages; ManufacturerDiodes; Websitehttp://www.diodes.com/; Environmental Compliance

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ZMV835B Overview

Variable Capacitance Diode, 68pF C(T), 25V, Silicon

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Diodes
package instruction	R-PDSO-G2
Reach Compliance Code	compliant
ECCN code	EAR99
Minimum breakdown voltage	25 V
Configuration	SINGLE
Diode Capacitance Tolerance	5%
Minimum diode capacitance ratio	5
Nominal diode capacitance	68 pF
Diode component materials	SILICON
Diode type	VARIABLE CAPACITANCE DIODE
JESD-30 code	R-PDSO-G2
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Maximum power dissipation	0.33 W
Certification status	Not Qualified
minimum quality factor	100
Maximum repetitive peak reverse voltage	25 V
surface mount	YES
Terminal surface	MATTE TIN
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	40

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