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ES1G

Description
1 A, 400 V, SILICON, SIGNAL DIODE, DO-214AC
Categorysemiconductor    Discrete semiconductor   
File Size230KB,2 Pages
ManufacturerSY
Websitehttp://www.shunyegroup.com/
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ES1G Overview

1 A, 400 V, SILICON, SIGNAL DIODE, DO-214AC

ES1G Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Processing package descriptionPlastic, HSMA, 2 PIN
stateDISCONTINUED
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formC BEND
terminal coatingtin lead
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
structuresingle
Diode component materialssilicon
Diode typeSignal diode
Maximum reverse recovery time0.0600 us
Maximum repetitive peak reverse voltage400 V
Maximum average forward current1 A
ES1A THRU ES1J
SURFACE MOUNT SUPER FAST RECTIFIER
Reverse Voltage -
50 to 600 Volts
DO-214AC
Forward Current -
1.0 Ampere
FEATURES
0.087 (2.21)
0.070 (1.80)
0.110(2.80)
0.100(2.54)
0.177(4.50)
0.157(3.99)
0.012(0.305)
0.006(0.152)
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
For surface mounted applications
Super fast switching for high efficiency
Low reverse leakage
Built-in strain relief,ideal for automated placement
High forward surge current capability
High temperature soldering guaranteed:
250 C/10 seconds at terminals
A
MECHANICAL DATA
0.060(1.52)
0.030(0.76)
0.008(0.203)MAX.
0.222(5.66)
0.194(4.93)
SMA
SMA(H)
A:
0.096(2.42)
0.078(1.98)
0.122(3.12)
0.110(2.82)
Case:
JEDEC DO-214AC molded plastic body
Terminals:
Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:0.003
ounce, 0.093 grams
0.004 ounce, 0.111 grams SMA(H)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
SYMBOLS
ES1A ES1B
ES1C
ES1D ES1E
ES1G
ES1J
UNITS
VOLTS
VOLTS
VOLTS
Amp
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at T
L
=55 C
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 1.0A
Maximum DC reverse current
T
A
=25 C
at rated DC blocking voltage
T
A
=100 C
Maximum reverse recovery time
(NOTE 1)
Typical junction capacitance (NOTE 2)
Typical thermal resistance (NOTE 3)
Operating junction and storage temperature range
V
RRM
V
RMS
V
DC
I
(AV)
50
35
50
100
70
100
150
105
150
200
140
200
1.0
300
210
300
400
280
400
600
420
600
I
FSM
V
F
I
R
t
rr
C
J
R
q
JA
T
J
,
T
STG
0.95
30.0
1.25
5.0
50.0
35
15.0
60.0
-65 to +150
Amps
Volts
u
A
ns
pF
C/W
C
Note:1.Reverse
recovery condition I
F
=0.5A,I
R
=1.0A,Irr=0.25A
2.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
3.P.C.B. mounted with 0.2x0.2”(5.0x5.0mm) copper pad areas
www.shunyegroup.com

ES1G Related Products

ES1G ES1B ES1E ES1A ES1D ES1C ES1J
Description 1 A, 400 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 100 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 300 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 50 V, SILICON, SIGNAL DIODE 1 A, 200 V, SILICON, SIGNAL DIODE 1 A, 150 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 600 V, SILICON, SIGNAL DIODE, DO-214AC
Number of terminals 2 2 - 2 2 2 2
Number of components 1 1 - 1 1 1 1
Processing package description Plastic, HSMA, 2 PIN GREEN, PLASTIC, SMA, 2 PIN - Plastic, SMA, 2 PIN Plastic, SMA, 2 PIN SMA, 2 PIN SMA, 2 PIN
state DISCONTINUED ACTIVE - ACTIVE ACTIVE ACTIVE TRANSFERRED
packaging shape Rectangle Rectangle - Rectangle Rectangle RECTANGULAR Rectangle
Package Size SMALL OUTLINE SMALL OUTLINE - SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
surface mount Yes Yes - Yes Yes Yes Yes
Terminal form C BEND C BEND - C BEND C BEND C BEND C BEND
terminal coating tin lead PURE Tin - - PURE Tin MATTE TIN NOT SPECIFIED
Terminal location pair pair - pair pair DUAL pair
Packaging Materials Plastic/Epoxy Plastic/Epoxy - Plastic/Epoxy Plastic/Epoxy PLASTIC/EPOXY Plastic/Epoxy
structure single single - single single SINGLE single
Diode component materials silicon silicon - silicon silicon SILICON silicon
Diode type Signal diode Signal diode - Signal diode Signal diode SIGNAL DIODE Signal diode
Maximum reverse recovery time 0.0600 us 0.0350 us - 0.0200 us 0.0200 us 0.0150 us 0.0600 us
Maximum repetitive peak reverse voltage 400 V 100 V - 50 V 200 V 150 V 600 V
Maximum average forward current 1 A 1 A - 1 A 1 A 1 A 1 A
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