HY62V256BLJ-10 datasheet, PDF - EEWORLD Datasheet

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HY62V256BLJ-10: DescriptionStandard SRAM, 32KX8, 100ns, CMOS, PDSO28, 0.330 INCH, SOP-28; Categorystorage storage; File Size252KB，10 Pages; ManufacturerSK Hynix; Websitehttp://www.hynix.com/eng/

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HY62V256BLJ-10 Overview

Standard SRAM, 32KX8, 100ns, CMOS, PDSO28, 0.330 INCH, SOP-28

HY62V256BLJ-10 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	SK Hynix
Parts packaging code	SOIC
package instruction	SOP, SOP28,.5
Contacts	28
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum access time	100 ns
I/O type	COMMON
JESD-30 code	R-PDSO-G28
JESD-609 code	e0
length	18.39 mm
memory density	262144 bit
Memory IC Type	STANDARD SRAM
memory width	8
Number of functions	1
Number of ports	1
Number of terminals	28
word count	32768 words
character code	32000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	32KX8
Output characteristics	3-STATE
Exportable	YES
Package body material	PLASTIC/EPOXY
encapsulated code	SOP
Encapsulate equivalent code	SOP28,.5
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Parallel/Serial	PARALLEL
power supply	3.3/5 V
Certification status	Not Qualified
Maximum seat height	2.794 mm
Maximum standby current	0.00001 A
Minimum standby current	2 V
Maximum slew rate	0.06 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal pitch	1.27 mm
Terminal location	DUAL
width	8.69 mm

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