Philips Semiconductors
Product specification
Voltage regulator diodes
FEATURES
•
Total power dissipation:
max. 500 mW
•
Tolerance series:
±5%
•
Working voltage range:
nom. 3.0 to 75 V
•
Non-repetitive peak reverse power
dissipation: max. 40 W.
APPLICATIONS
•
Low-power voltage stabilizers or
voltage references.
handbook, 4 columns
PMLL5225B to PMLL5267B
DESCRIPTION
Low-power voltage regulator diodes in small hermetically sealed glass
SOD80C SMD packages. The series consists of 43 types with nominal working
voltages from 3.0 to 75 V.
k
a
MAM215
The cathode is indicated by a yellow band.
Fig.1 Simplified outline (SOD80C) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
I
F
I
ZSM
P
tot
P
ZSM
PARAMETER
continuous forward current
non-repetitive peak reverse current
total power dissipation
non-repetitive peak reverse power
dissipation
t
p
= 100
µs;
square wave;
T
j
= 25
°C
prior to surge
T
amb
= 25
°C;
note 1
t
p
= 100
µs;
square wave;
T
j
= 25
°C
prior to surge; see Fig.3
t
p
= 8.3 ms; square wave;
T
j
≤
55
°C
prior to surge
T
stg
T
j
Note
1. If flanges are kept at T
flange
≤
75
°C.
ELECTRICAL CHARACTERISTICS
Total series
T
j
= 25
°C;
unless otherwise specified.
SYMBOL
V
F
PARAMETER
forward voltage
CONDITIONS
I
F
= 200 mA; see Fig.4
MIN.
−
MAX.
1.1
V
UNIT
storage temperature
junction temperature
CONDITIONS
MIN.
−
MAX.
250
UNIT
mA
see Table
“Per type”
−
−
−
−65
−65
500
40
10
+200
+200
mW
W
W
°C
°C
1996 Apr 26
2
1996 Apr 26
4
Philips Semiconductors
TYPE No.
WORKING DIFFERENTIAL
VOLTAGE RESISTANCE
V
Z
(V)
(1)
r
dif
(Ω)
at I
Ztest
at I
Ztest
NOM.
MAX.
600
600
600
600
600
600
700
700
800
900
1000
1100
1300
1400
1400
1600
1700
TEMP. COEFF.
S
Z
(%/K)
at I
Z
(2)
DIODE CAP. REVERSE CURRENT
TEST
C
d
(pF)
CURRENT
at REVERSE
I
Ztest
(mA) at f = 1 MHz;
VOLTAGE
at V
R
= 0 V
I
R
(µA)
V
R
NON-REPETITIVE PEAK
REVERSE CURRENT
I
ZSM
(A)
at t
p
= 100
µs;
T
amb
= 25
°C
MAX.
1.25
1.25
1.25
1.0
1.0
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.3
0.3
0.25
0.2
Voltage regulator diodes
MAX.
+0.087
+0.088
+0.089
+0.090
+0.091
+0.091
+0.092
+0.093
+0.094
+0.095
+0.095
+0.096
+0.096
+0.097
+0.097
+0.097
+0.098
5.6
5.2
5.0
4.6
4.5
4.2
3.8
3.4
3.2
3.0
2.7
2.5
2.2
2.1
2.0
1.8
1.7
MAX.
60
55
55
50
50
50
45
45
45
40
40
40
40
40
35
35
35
MAX.
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
(V)
17.0
18.0
19.0
21.0
21.0
23.0
25.0
27.0
30.0
33.0
36.0
39.0
43.0
46.0
47.0
52.0
56.0
PMLL5251B
PMLL5252B
PMLL5253B
PMLL5254B
PMLL5255B
PMLL5256B
PMLL5257B
PMLL5258B
PMLL5259B
PMLL5260B
PMLL5261B
PMLL5262B
PMLL5263B
PMLL5264B
PMLL5265B
PMLL5266B
PMLL5267B
Notes
22
24
25
27
28
30
33
36
39
43
47
51
56
60
62
68
75
PMLL5225B to PMLL5267B
1. V
Z
is measured with device at thermal equilibrium while held in clips at 10 mm from body in still air at 25
°C.
2. For types PMLL5225B to PMLL5242B the I
Z
current is 7.5 mA; for PMLL5243B and higher I
Z
= I
Ztest
. S
Z
values valid between 25
°C
and 125
°C.
Product specification
Philips Semiconductors
Product specification
Voltage regulator diodes
THERMAL CHARACTERISTICS
SYMBOL
R
th j-tp
R
th j-a
Note
1. Device mounted on a printed circuit-board without metallization pad.
PARAMETER
PMLL5225B to PMLL5267B
CONDITIONS
VALUE
300
380
UNIT
K/W
K/W
thermal resistance from junction to tie-point lead length 10 mm
thermal resistance from junction to ambient lead length max.; see Fig.2 and note 1
1996 Apr 26
5
Embedded System
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