HY6718100C-6 datasheet, PDF - EEWORLD Datasheet

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HY6718100C-6: DescriptionCache SRAM, 64KX18, 6ns, CMOS, PQCC52, PLASTIC, LCC-52; Categorystorage storage; File Size283KB，12 Pages; ManufacturerSK Hynix; Websitehttp://www.hynix.com/eng/

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HY6718100C-6 Overview

Cache SRAM, 64KX18, 6ns, CMOS, PQCC52, PLASTIC, LCC-52

HY6718100C-6 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	SK Hynix
Parts packaging code	LCC
package instruction	QCCJ, LDCC52,.8SQ
Contacts	52
Reach Compliance Code	compliant
ECCN code	3A991.B.2.A
Maximum access time	6 ns
I/O type	COMMON
JESD-30 code	S-PQCC-J52
JESD-609 code	e0
length	19.1262 mm
memory density	1179648 bit
Memory IC Type	CACHE SRAM
memory width	18
Number of functions	1
Number of ports	1
Number of terminals	52
word count	65536 words
character code	64000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	64KX18
Output characteristics	3-STATE
Exportable	YES
Package body material	PLASTIC/EPOXY
encapsulated code	QCCJ
Encapsulate equivalent code	LDCC52,.8SQ
Package shape	SQUARE
Package form	CHIP CARRIER
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	5 V
Certification status	Not Qualified
Maximum seat height	4.57 mm
Maximum standby current	0.003 A
Minimum standby current	4.75 V
Maximum slew rate	0.25 mA
Maximum supply voltage (Vsup)	5.25 V
Minimum supply voltage (Vsup)	4.75 V
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	J BEND
Terminal pitch	1.27 mm
Terminal location	QUAD
Maximum time at peak reflow temperature	NOT SPECIFIED
width	19.1262 mm

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HY6718100C-6 Related Products

	HY6718100C-6	HY6718101C-9	HY6718100C-12	HY6718100C-9	HY6718101C-12	HY6718101C-6
Description	Cache SRAM, 64KX18, 6ns, CMOS, PQCC52, PLASTIC, LCC-52	Cache SRAM, 64KX18, 9ns, CMOS, PQCC52, PLASTIC, LCC-52	Cache SRAM, 64KX18, 12ns, CMOS, PQCC52, PLASTIC, LCC-52	Cache SRAM, 64KX18, 9ns, CMOS, PQCC52, PLASTIC, LCC-52	Cache SRAM, 64KX18, 12ns, CMOS, PQCC52, PLASTIC, LCC-52	Cache SRAM, 64KX18, 6ns, CMOS, PQCC52, PLASTIC, LCC-52
Is it lead-free?	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
Maker	SK Hynix	SK Hynix	SK Hynix	SK Hynix	SK Hynix	SK Hynix
Parts packaging code	LCC	LCC	LCC	LCC	LCC	LCC
package instruction	QCCJ, LDCC52,.8SQ	QCCJ, LDCC52,.8SQ	QCCJ, LDCC52,.8SQ	QCCJ, LDCC52,.8SQ	QCCJ, LDCC52,.8SQ	QCCJ, LDCC52,.8SQ
Contacts	52	52	52	52	52	52
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant
ECCN code	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A
Maximum access time	6 ns	9 ns	12 ns	9 ns	12 ns	6 ns
I/O type	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
JESD-30 code	S-PQCC-J52	S-PQCC-J52	S-PQCC-J52	S-PQCC-J52	S-PQCC-J52	S-PQCC-J52
JESD-609 code	e0	e0	e0	e0	e0	e0
length	19.1262 mm	19.1262 mm	19.1262 mm	19.1262 mm	19.1262 mm	19.1262 mm
memory density	1179648 bit	1179648 bit	1179648 bit	1179648 bit	1179648 bit	1179648 bit
Memory IC Type	CACHE SRAM	CACHE SRAM	CACHE SRAM	CACHE SRAM	CACHE SRAM	CACHE SRAM
memory width	18	18	18	18	18	18
Number of functions	1	1	1	1	1	1
Number of ports	1	1	1	1	1	1
Number of terminals	52	52	52	52	52	52
word count	65536 words	65536 words	65536 words	65536 words	65536 words	65536 words
character code	64000	64000	64000	64000	64000	64000
Operating mode	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C
organize	64KX18	64KX18	64KX18	64KX18	64KX18	64KX18
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Exportable	YES	YES	YES	YES	YES	YES
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	QCCJ	QCCJ	QCCJ	QCCJ	QCCJ	QCCJ
Encapsulate equivalent code	LDCC52,.8SQ	LDCC52,.8SQ	LDCC52,.8SQ	LDCC52,.8SQ	LDCC52,.8SQ	LDCC52,.8SQ
Package shape	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE
Package form	CHIP CARRIER	CHIP CARRIER	CHIP CARRIER	CHIP CARRIER	CHIP CARRIER	CHIP CARRIER
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
power supply	5 V	5 V	5 V	5 V	5 V	5 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum seat height	4.57 mm	4.57 mm	4.57 mm	4.57 mm	4.57 mm	4.57 mm
Maximum standby current	0.003 A	0.003 A	0.003 A	0.003 A	0.003 A	0.003 A
Minimum standby current	4.75 V	4.75 V	4.75 V	4.75 V	4.75 V	4.75 V
Maximum slew rate	0.25 mA	0.225 mA	0.18 mA	0.225 mA	0.18 mA	0.25 mA
Maximum supply voltage (Vsup)	5.25 V	5.25 V	5.25 V	5.25 V	5.25 V	5.25 V
Minimum supply voltage (Vsup)	4.75 V	4.75 V	4.75 V	4.75 V	4.75 V	4.75 V
Nominal supply voltage (Vsup)	5 V	5 V	5 V	5 V	5 V	5 V
surface mount	YES	YES	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	J BEND	J BEND	J BEND	J BEND	J BEND	J BEND
Terminal pitch	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm
Terminal location	QUAD	QUAD	QUAD	QUAD	QUAD	QUAD
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
width	19.1262 mm	19.1262 mm	19.1262 mm	19.1262 mm	19.1262 mm	19.1262 mm

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