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P4KE530/73

Description
Trans Voltage Suppressor Diode, 477V V(RWM), Unidirectional,
CategoryDiscrete semiconductor    diode   
File Size47KB,3 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet Parametric View All

P4KE530/73 Overview

Trans Voltage Suppressor Diode, 477V V(RWM), Unidirectional,

P4KE530/73 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerVishay
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum clamping voltage760 V
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-609 codee0
polarityUNIDIRECTIONAL
Maximum repetitive peak reverse voltage477 V
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
P4KE530 and P4KE550
Vishay Semiconductors
T
RANS
Z
ORB
®
Transient Voltage Suppressors
Steady State Power
1W
Peak Pulse Power
300W
Breakdown Voltage
530, 550V
DO-204AL (DO-41 Plastic)
Features
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
• Protects power IC controllers such as TOPSwitch
®
• Glass passivated junction
• High temperature soldering guaranteed:
250°C/10 seconds at terminals
• Excellent clamping capability
• Available in unidirectional only
1.0 (25.4)
MIN.
0.107 (2.7)
0.080 (2.0)
DIA.
0.205 (5.2)
0.160 (4.1)
Mechanical Data
Case:
JEDEC DO-204AL molded plastic body over
passivated junction
Terminals:
Axial leads, solderable per MIL-STD-750,
Method 2026
Polarity:
The band denotes the cathode, which is positive
with respect to the anode under normal TVS operation
Mounting Position:
Any
Weight:
0.012 oz., 0.3 g
Packaging Codes – Options (Antistatic):
51 – 1K per Bulk box, 10K/carton
54 – 5.5K per 13" paper Reel
(52mm horiz. tape), 16.5K/carton
73 – 3K per horiz. tape & Ammo box, 30K/carton
T
A
= 25
O
C unless otherwise noted.
1.0 (25.4)
MIN.
0.034 (0.86)
0.028 (0.71)
DIA.
Dimensions are in inches and (millimeters)
Maximum Ratings and Thermal Characteristics
Parameter
Steady state power dissipation
(Note 3)
Peak pulse power dissipation
(Note 1, 2, Fig. 1)
Stand-off voltage
Typical thermal resistance junction-to-lead
Typical thermal resistance junction-to-ambient
Operating junction and storage temperature range
Symbol
P
M(AV)
P
PPM
V
WM
R
ΘJL
R
ΘJA
T
J
, T
STG
P4KE530
1.0
P4KE550
Unit
W
W
Minimum 300
477
27
75
–55 to +150
495
V
°C/W
°C/W
°C
Electrical Characteristics
Parameter
Minimum breakdown voltage at 100µA
T
A
= 25
O
C unless otherwise noted.
Symbol
V
(BR)
Vc
I
D
P4KE530
530
760
1.0
650
90
7.5
P4KE550
550
Unit
V
V
µA
mV°C
pF
Max. clamping voltage at 400mA, 10/1000µs
-
waveform
Maximum DC reverse leakage current at V
WM
Typical temperature coefficient of V
(BR)
Typical capacitance
(Note 4)
Notes:
(1)
(2)
(3)
(4)
at 0V
at 200V
C
J
Non repetitive current pulse per Fig.3 and derated above 25
O
C per Fig. 2
Peak pulse power waveform is 10/1000µs
Lead temperature at 75
O
C = T
L
Measured at 1MH
Z
Document Number 88366
03-Mar-03
www.vishay.com
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