P4SMA6.8A Series
Vishay Semiconductors
formerly General Semiconductor
Surface Mount T
RANS
Z
ORB
®
Transient Voltage Suppressors
DO-214AC
(SMA)
0.065 (1.65)
0.049 (1.25)
Cathode Band
0.110 (2.79)
0.100 (2.54)
0.177 (4.50)
0.157 (3.99)
ded ge*
ten an
Ex e R
ltag
Vo
Dimensions in inches
and (millimeters)
V
(BR)
Unidirectional
6.8 to 540V
V
(BR)
Bidirectional
6.8 to 220V
Peak Pulse Power
400W
Mounting Pad Layout
0.094 MAX.
(2.38 MAX.)
0.066 MIN.
(1.68 MIN.)
0.012 (0.305)
0.006 (0.152)
0.090 (2.29)
0.078 (1.98)
0.052 MIN.
(1.32 MIN.)
0.220
(5.58) REF
0.008 (0.203) MAX.
0.208 (5.28)
0.194 (4.93)
0.060 (1.52)
0.030 (0.76)
Features
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
• Optimized for LAN protection applications
• Ideal for ESD protection of data lines in accordance with
IEC 1000-4-2 (IEC801-2)
• Ideal for EFT protection of data lines in accordance with
IEC1000-4-4 (IEC801-4)
• Low profile package with built-in strain relief for
surface mounted applications
• Glass passivated junction
• Low incremental surge resistance, excellent clamping
capability
• 400W peak pulse power capability with a 10/1000µs wave-
form, repetition rate (duty cycle): 0.01% (300W above 91V)
• Very Fast response time
Mechanical Data
Case:
JEDEC DO-214AC molded plastic over
passivated chip
Terminals:
Solder plated, solderable per MIL-STD-750,
Method 2026. High temperature soldering guaranteed:
250°C/10 seconds at terminals.
Polarity:
For uni-directional types the band denotes the
cathode, which is positive with respect to the anode
under normal TVS operation.
Mounting Position:
Any
Weight:
0.002oz., 0.064g
Packaging Codes – Options (Antistatic):
51 – 1K per Bulk box, 20K/carton
61 – 1.8K per 7” plastic Reel (12mm tape), 36K/carton
5A – 7.5K per 13” plastic Reel (12mm tape), 75K/carton
*
Voltages above 220V available Q2-2002
Devices for Bidirectional Applications
For bi-directional devices, use suffix CA (e.g. P4SMA10CA). Electrical characteristics apply in both directions.
Maximum Ratings & Thermal Characteristics
Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Peak power dissipation with a 10/1000µs waveform
(1)(2)
(Fig. 1)
Peak pulse current with a 10/1000µs waveform
(1)
(Fig. 3)
Power dissipation on infinite heatsink, T
A
= 50°C
Peak forward surge current 8.3ms single half sine-wave
uni-directional only
(2)
Thermal resistance junction to ambient air
(3)
Thermal resistance junction to leads
Operating junction and storage temperature range
Symbol
P
PPM
I
PPM
P
M(AV)
I
FSM
R
θJA
R
θJL
T
J
, T
STG
Value
400
See Next Table
1.0
40
120
30
–65 to +150
Unit
W
A
W
A
°C/W
°C/W
°C
Notes:
(1) Non-repetitive current pulse, per Fig. 3 and derated above T
A
= 25°C per Fig. 2. Rating is 300W above 91V.
(2) Mounted on 0.2 x 0.2” (5.0 x 5.0mm) copper pads to each terminal
(3) Mounted on minimum recommended pad layout
Document Number 88367
9-Apr-02
www.vishay.com
1
P4SMA6.8A Series
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves
(T
A
= 25°C unless otherwise noted)
Fig. 1 – Peak Pulse Power Rating Curve
Peak Pulse Power (P
PP
) or Current (I
PPM
)
Derating in Percentage, %
100
100
Fig. 2 – Pulse Derating Curve
P
PPM
— Peak Pulse Power (kW)
Non-repetitive Pulse
Waveform shown in Fig. 3
T
A
= 25°C
10
75
P4SMA100A --
P4SMA220A
1
P4SMA6.8A --
P4SMA91A
50
25
0.2 x 0.2" (5.0 x 5.0mm)
Copper Pad Areas
0
0
25
50
75
100
125
150
175
200
0.2 x 0.2" (5.0 x 5.0mm)
Copper Pad Areas
0.1
0.1µs
1.0µs
10µs
100µs
1.0ms
10ms
t
d
— Pulse Width (sec.)
T
A
— Ambient Temperature (°C)
Fig. 3 – Pulse Waveform
150
10,000
Fig. 4 – Typical Junction Capacitance
C
J
— Junction Capacitance (pF)
T
J
= 25°C
f = 1.0MHz
Vsig = 50mVp-p
1,000
Measured at
Stand-Off
Voltage, V
WM
Uni-Directional
I
PPM
— Peak Pulse Current, % I
RSM
tr = 10µsec.
Peak Value
I
PPM
100
T
J
= 25°C
Pulse Width (td)
is defined as the point
where the peak current
decays to 50% of I
PPM
Half Value — IPP
2
I
PPM
50
10/1000µsec. Waveform
as defined by R.E.A.
100
Bi-Directional
td
0
10
0
1.0
2.0
3.0
4.0
1
10
100
200
t — Time (ms)
V
(BR)
— Breakdown Voltage (V)
Fig. 5 – Typical Transient Thermal
Impedance
I
FSM
— Peak Forward Surge Current (A)
1000
200
Fig. 6 - Maximum Non-Repetitive Forward
Surge Current Uni-Directional Only
T
J
= T
J
max.
8.3ms Single Half Sine-Wave
(JEDEC Method)
Transient Thermal Impedance (°C/W)
100
100
50
10
1
0.001
10
1
5
10
50
100
0.01
0.1
1
10
100
1000
t
p
— Pulse Duration (sec)
Document Number 88367
9-Apr-02
Number of Cycles at 60 Hz
www.vishay.com
3
Microchip MCU
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