PMEM4020AND
NPN transistor/Schottky rectifier module
Rev. 01 — 4 October 2004
Product data sheet
1. Product profile
1.1 General description
Combination of an NPN transistor with low V
CEsat
and high current capability and a planar
Schottky barrier rectifier with an integrated guard ring for stress protection in a SOT457
(SC-74) small plastic package. PNP complement: PMEM4020APD.
1.2 Features
s
s
s
s
s
s
600 mW total power dissipation
High current capability up to 2 A
Reduces printed-circuit board area required
Reduces pick and place costs
Small plastic SMD package
Transistor
x
Low collector-emitter saturation voltage.
s
Diode
x
Ultra high-speed switching
x
Very low forward voltage
x
Guard ring protected.
1.3 Applications
s
s
s
s
s
DC-to-DC converters
Inductive load drivers
General purpose load drivers
Reverse polarity protection circuits
MOSFET drivers.
1.4 Quick reference data
Table 1:
Symbol
V
CEO
I
C
Quick reference data
Parameter
collector-emitter voltage
collector current (DC)
Conditions
open base
continuous;
T
s
≤
55
°C
[1]
Min
-
-
Typ
-
-
Max
40
2
Unit
V
A
NPN transistor
Philips Semiconductors
PMEM4020AND
NPN transistor/Schottky rectifier module
Quick reference data
…continued
Parameter
continuous reverse voltage
continuous forward current
Conditions
Min
-
-
Typ
-
-
Max
40
1
Unit
V
A
Table 1:
Symbol
V
R
I
F
[1]
Schottky barrier rectifier
Soldering point of collector or cathode tab.
2. Pinning information
Table 2:
Pin
1
2
3
4
5
6
Discrete pinning
Description
emitter
not connected
cathode
anode
base
collector
1
2
3
SOT457
Simplified outline
6
5
4
Symbol
4
5
3
6
1
sym041
3. Ordering information
Table 3:
Ordering information
Package
Name
PMEM4020AND
SC-74
Description
plastic surface mounted package; 6 leads
Version
SOT457
Type number
4. Marking
Table 4:
Marking
Marking code
D2
Type number
PMEM4020AND
5. Limiting values
Table 5:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CBO
V
CEO
V
EBO
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
Conditions
open emitter
open base
open collector
Min
-
-
-
Max
40
40
5
Unit
V
V
V
NPN transistor
9397 750 13708
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 01 — 4 October 2004
2 of 13
Philips Semiconductors
PMEM4020AND
NPN transistor/Schottky rectifier module
Table 5:
Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
I
C
Parameter
collector current (DC)
Conditions
continuous
continuous
continuous
continuous;
T
s
≤
55
°C
I
CM
I
BM
P
tot
peak collector current
peak base current
total power dissipation
T
amb
≤
25
°C
T
amb
≤
25
°C
T
amb
≤
25
°C
T
s
≤
55
°C
T
j
V
R
I
F
I
FRM
I
FSM
P
tot
junction temperature
continuous reverse voltage
continuous forward voltage
repetitive peak forward
current
non-repetitive peak forward
current
total power dissipation
t
p
≤
1ms;
δ ≤
0.5
t = 8 ms; square
wave
T
amb
≤
25
°C
T
amb
≤
25
°C
T
amb
≤
25
°C
T
s
≤
55
°C
T
j
P
tot
T
stg
T
amb
[1]
[2]
[3]
[4]
[1]
[2]
[3]
[4]
[2]
[1]
[2]
[3]
[4]
[1]
[2]
[3]
[4]
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
−65
[2]
Max
0.95
1.30
1.65
2
3
1
295
400
500
1000
150
40
1
3.5
10
295
400
500
1000
150
600
+150
+150
Unit
A
A
A
A
A
A
mW
mW
mW
mW
°C
V
A
A
A
mW
mW
mW
mW
°C
mW
°C
°C
Schottky barrier rectifier
junction temperature
total power dissipation
storage temperature
ambient temperature
T
amb
≤
25
°C
Combined device
[2]
−65
Mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, standard footprint.
Device mounted on a printed-circuit board, single-sided copper, tin-plated, 1 cm
2
mounting pad for both
collector and cathode.
Mounted on a ceramic printed-circuit board, single-sided copper, tin-plated, standard footprint.
Soldering point of collector or cathode tab.
9397 750 13708
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 01 — 4 October 2004
3 of 13
Philips Semiconductors
PMEM4020AND
NPN transistor/Schottky rectifier module
6. Thermal characteristics
Table 6:
Thermal characteristics
[1]
Conditions
in free air
in free air
[2]
Symbol Parameter
Single device
R
th(j-s)
R
th(j-a)
thermal resistance from
junction to soldering point
thermal resistance from
junction to ambient
Min
-
-
-
-
-
Typ
-
-
-
-
-
Max
95
250
315
425
208
Unit
K/W
K/W
K/W
K/W
K/W
[3]
[4]
[5]
Combined device
R
th(j-a)
[1]
thermal resistance from
junction to ambient
in free air
[3]
For Schottky barrier rectifiers thermal run-away has to be considered, as in some applications the reverse
power losses P
R
are a significant part of the total power losses. Nomograms for determining the reverse
power losses P
R
and I
F(AV)
rating will be available on request.
Soldering point of collector or cathode tab.
Mounted on a ceramic printed-circuit board, single-sided copper, tin-plated, standard footprint.
Device mounted on a printed-circuit board, single-sided copper, tin-plated, 1 cm
2
mounting pad for both
collector and cathode tab.
Mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, standard footprint.
[2]
[3]
[4]
[5]
9397 750 13708
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 01 — 4 October 2004
4 of 13
Philips Semiconductors
PMEM4020AND
NPN transistor/Schottky rectifier module
7. Characteristics
Table 7:
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol
I
CBO
Parameter
collector-base cut-off
current
collector-emitter
cut-off current
emitter-base cut-off
current
DC current gain
Conditions
V
CB
= 40 V; I
E
= 0 A
V
CB
= 40 V; I
E
= 0 A;
T
j
= 150
°C
V
CE
= 30 V; I
B
= 0 A
V
EB
= 5 V; I
C
= 0 A
V
CE
= 5 V; I
C
= 1 mA
V
CE
= 5 V; I
C
= 500 mA
V
CE
= 5 V; I
C
= 1 A
V
CE
= 5 V; I
C
= 2 A
V
CEsat
collector-emitter
saturation voltage
I
C
= 100 mA; I
B
= 1 mA
I
C
= 500 mA; I
B
= 50 mA
I
C
= 1 A; I
B
= 100 mA
I
C
= 2 A; I
B
= 200 mA
R
CEsat
V
BEsat
V
BEon
f
T
C
c
equivalent
on-resistance
base-emitter
saturation voltage
base-emitter turn-on
voltage
transition frequency
collector capacitance
I
C
= 1 A; I
B
= 100 mA
I
C
= 1 A; I
B
= 100 mA
V
CE
= 5 V; I
C
= 1 A
V
CE
= 10 V; I
C
= 50 mA;
f = 100 MHz
V
CB
= 10 V; I
E
= i
e
= 0 A;
f = 1 MHz
see
Figure 1
I
F
= 0.1 mA
I
F
= 1 mA
I
F
= 10 mA
I
F
= 100 mA
I
F
= 1000 mA
I
R
reverse current
see
Figure 2
V
R
= 10 V
V
R
= 40 V
C
d
diode capacitance
Pulse test: t
p
≤
300
µs; δ ≤
0.02.
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
Min
-
-
-
-
300
300
200
75
-
-
-
-
-
-
-
150
-
Typ
-
-
-
-
-
-
-
-
-
-
-
-
150
-
-
-
-
Max
100
50
100
100
-
900
-
-
75
100
190
400
190
1.2
1.1
-
10
Unit
nA
µA
nA
nA
NPN transistor
I
CEO
I
EBO
h
FE
mV
mV
mV
mV
mΩ
V
V
MHz
pF
[1]
[1]
Schottky barrier rectifier
V
F
continuous forward
voltage
-
-
-
-
-
-
-
-
95
155
220
295
540
7
30
43
130
210
270
350
640
20
100
48
mV
mV
mV
mV
mV
µA
µA
pF
V
R
= 1 V; f = 1 MHz;
see
Figure 3
[1]
9397 750 13708
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 01 — 4 October 2004
5 of 13
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