PMEM4020AND
NPN transistor/Schottky rectifier module
Rev. 02 — 31 August 2009
Product data sheet
1. Product profile
1.1 General description
Combination of an NPN transistor with low V
CEsat
and high current capability and a planar
Schottky barrier rectifier with an integrated guard ring for stress protection in a SOT457
(SC-74) small plastic package. PNP complement: PMEM4020APD
1.2 Features
I
I
I
I
I
I
600 mW total power dissipation
High current capability up to 2 A
Reduces printed-circuit board area required
Reduces pick and place costs
Small plastic SMD package
Transistor
N
Low collector-emitter saturation voltage
I
Diode
N
Ultra high-speed switching
N
Very low forward voltage
N
Guard ring protected
1.3 Applications
I
I
I
I
I
DC-to-DC converters
Inductive load drivers
General purpose load drivers
Reverse polarity protection circuits
MOSFET drivers
1.4 Quick reference data
Table 1.
Symbol
V
CEO
I
C
Quick reference data
Parameter
collector-emitter voltage
collector current (DC)
Conditions
open base
continuous;
T
s
≤
55
°C
[1]
Min
-
-
Typ
-
-
Max
40
2
Unit
V
A
NPN transistor
NXP Semiconductors
PMEM4020AND
NPN transistor/Schottky rectifier module
Quick reference data
…continued
Parameter
continuous reverse voltage
continuous forward current
Conditions
Min
-
-
Typ
-
-
Max
40
1
Unit
V
A
Table 1.
Symbol
V
R
I
F
[1]
Schottky barrier rectifier
Soldering point of collector or cathode tab.
2. Pinning information
Table 2.
Pin
1
2
3
4
5
6
Discrete pinning
Description
emitter
not connected
cathode
anode
base
collector
5
Simplified outline
6
5
4
Symbol
4
3
6
1
2
3
1
sym041
3. Ordering information
Table 3.
Ordering information
Package
Name
PMEM4020AND
SC-74
Description
plastic surface mounted package; 6 leads
Version
SOT457
Type number
4. Marking
Table 4.
Marking
Marking code
D2
Type number
PMEM4020AND
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CBO
V
CEO
V
EBO
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
Conditions
open emitter
open base
open collector
Min
-
-
-
Max
40
40
5
Unit
V
V
V
NPN transistor
PMEM4020AND_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 31 August 2009
2 of 13
NXP Semiconductors
PMEM4020AND
NPN transistor/Schottky rectifier module
Table 5.
Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
I
C
Parameter
collector current (DC)
Conditions
continuous
continuous
continuous
continuous;
T
s
≤
55
°C
I
CM
I
BM
P
tot
peak collector current
peak base current
total power dissipation
T
amb
≤
25
°C
T
amb
≤
25
°C
T
amb
≤
25
°C
T
s
≤
55
°C
T
j
V
R
I
F
I
FRM
I
FSM
P
tot
junction temperature
continuous reverse voltage
continuous forward voltage
repetitive peak forward
current
non-repetitive peak forward
current
total power dissipation
t
p
≤
1ms;
δ ≤
0.5
t = 8 ms; square
wave
T
amb
≤
25
°C
T
amb
≤
25
°C
T
amb
≤
25
°C
T
s
≤
55
°C
T
j
P
tot
T
stg
T
amb
[1]
[2]
[3]
[4]
[1]
[2]
[3]
[4]
[2]
[1]
[2]
[3]
[4]
[1]
[2]
[3]
[4]
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
−65
[2]
Max
0.95
1.30
1.65
2
3
1
295
400
500
1000
150
40
1
3.5
10
295
400
500
1000
150
600
+150
+150
Unit
A
A
A
A
A
A
mW
mW
mW
mW
°C
V
A
A
A
mW
mW
mW
mW
°C
mW
°C
°C
Schottky barrier rectifier
junction temperature
total power dissipation
storage temperature
ambient temperature
T
amb
≤
25
°C
Combined device
[2]
−65
Mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, standard footprint.
Device mounted on a printed-circuit board, single-sided copper, tin-plated, 1cm
2
mounting pad for both
collector and cathode.
Mounted on a ceramic printed-circuit board, single-sided copper, tin-plated, standard footprint.
Soldering point of collector or cathode tab.
PMEM4020AND_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 31 August 2009
3 of 13
NXP Semiconductors
PMEM4020AND
NPN transistor/Schottky rectifier module
6. Thermal characteristics
Table 6.
Thermal characteristics
[1]
Conditions
in free air
in free air
[2]
Symbol Parameter
Single device
R
th(j-s)
R
th(j-a)
thermal resistance from
junction to soldering point
thermal resistance from
junction to ambient
Min
-
-
-
-
-
Typ
-
-
-
-
-
Max
95
250
315
425
208
Unit
K/W
K/W
K/W
K/W
K/W
[3]
[4]
[5]
Combined device
R
th(j-a)
[1]
thermal resistance from
junction to ambient
in free air
[3]
For Schottky barrier rectifiers thermal run-away has to be considered, as in some applications the reverse
power losses P
R
are a significant part of the total power losses. Nomograms for determining the reverse
power losses P
R
and I
F(AV)
rating will be available on request.
Soldering point of collector or cathode tab.
Mounted on a ceramic printed-circuit board, single-sided copper, tin-plated, standard footprint.
Device mounted on a printed-circuit board, single-sided copper, tin-plated, 1cm
2
mounting pad for both
collector and cathode tab.
Mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, standard footprint.
[2]
[3]
[4]
[5]
PMEM4020AND_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 31 August 2009
4 of 13
NXP Semiconductors
PMEM4020AND
NPN transistor/Schottky rectifier module
7. Characteristics
Table 7.
Characteristics
T
amb
= 25
°
C unless otherwise specified
Symbol
I
CBO
Parameter
collector-base cut-off
current
collector-emitter
cut-off current
emitter-base cut-off
current
DC current gain
Conditions
V
CB
= 40 V; I
E
= 0 A
V
CB
= 40 V; I
E
= 0 A;
T
j
= 150
°C
V
CE
= 30 V; I
B
= 0 A
V
EB
= 5 V; I
C
= 0 A
V
CE
= 5 V; I
C
= 1 mA
V
CE
= 5 V; I
C
= 500 mA
V
CE
= 5 V; I
C
= 1 A
V
CE
= 5 V; I
C
= 2 A
V
CEsat
collector-emitter
saturation voltage
I
C
= 100 mA; I
B
= 1 mA
I
C
= 500 mA; I
B
= 50 mA
I
C
= 1 A; I
B
= 100 mA
I
C
= 2 A; I
B
= 200 mA
R
CEsat
V
BEsat
V
BEon
f
T
C
c
equivalent
on-resistance
base-emitter
saturation voltage
base-emitter turn-on
voltage
transition frequency
collector capacitance
I
C
= 1 A; I
B
= 100 mA
I
C
= 1 A; I
B
= 100 mA
V
CE
= 5 V; I
C
= 1 A
V
CE
= 10 V; I
C
= 50 mA;
f = 100 MHz
V
CB
= 10 V; I
E
= i
e
= 0 A;
f = 1 MHz
see
Figure 1
I
F
= 0.1 mA
I
F
= 1 mA
I
F
= 10 mA
I
F
= 100 mA
I
F
= 1000 mA
I
R
reverse current
see
Figure 2
V
R
= 10 V
V
R
= 40 V
C
d
diode capacitance
Pulse test: t
p
≤
300
µs; δ ≤
0.02
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
Min
-
-
-
-
300
300
200
75
-
-
-
-
-
-
-
150
-
Typ
-
-
-
-
-
-
-
-
-
-
-
-
150
-
-
-
-
Max
100
50
100
100
-
900
-
-
75
100
190
400
190
1.2
1.1
-
10
Unit
nA
µA
nA
nA
NPN transistor
I
CEO
I
EBO
h
FE
mV
mV
mV
mV
mΩ
V
V
MHz
pF
[1]
[1]
Schottky barrier rectifier
V
F
continuous forward
voltage
-
-
-
-
-
-
-
-
95
155
220
295
540
7
30
43
130
210
270
350
640
20
100
48
mV
mV
mV
mV
mV
µA
µA
pF
V
R
= 1 V; f = 1 MHz;
see
Figure 3
[1]
PMEM4020AND_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 31 August 2009
5 of 13
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