Power Field-Effect Transistor, 5.6A I(D), 20V, 0.095ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, CASE 751-05, SOIC-8
| Parameter Name | Attribute value |
| Maker | Motorola ( NXP ) |
| package instruction | SMALL OUTLINE, R-PDSO-G8 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Other features | AVALANCHE ENERGY RATED; LOGIC LEVEL COMPATIBLE |
| Avalanche Energy Efficiency Rating (Eas) | 567 mJ |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 20 V |
| Maximum drain current (ID) | 5.6 A |
| Maximum drain-source on-resistance | 0.095 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 code | R-PDSO-G8 |
| Number of components | 2 |
| Number of terminals | 8 |
| Operating mode | ENHANCEMENT MODE |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Polarity/channel type | P-CHANNEL |
| Maximum pulsed drain current (IDM) | 30 A |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal form | GULL WING |
| Terminal location | DUAL |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
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