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MMSF3P03HDR1

Description
4600mA, 30V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size278KB,7 Pages
ManufacturerMotorola ( NXP )
Websitehttps://www.nxp.com
Download Datasheet Parametric Compare View All

MMSF3P03HDR1 Overview

4600mA, 30V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET

MMSF3P03HDR1 Parametric

Parameter NameAttribute value
MakerMotorola ( NXP )
package instructionSMALL OUTLINE, R-PDSO-G8
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresLOGIC LEVEL COMPATIBLE, AVALANCHE RATED
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (ID)4.6 A
Maximum drain-source on-resistance0.1 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)190 pF
JESD-30 codeR-PDSO-G8
Number of components1
Number of terminals8
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeP-CHANNEL
Maximum power consumption environment2.5 W
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON

MMSF3P03HDR1 Related Products

MMSF3P03HDR1
Description 4600mA, 30V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
Maker Motorola ( NXP )
package instruction SMALL OUTLINE, R-PDSO-G8
Reach Compliance Code unknown
ECCN code EAR99
Other features LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
Configuration SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 30 V
Maximum drain current (ID) 4.6 A
Maximum drain-source on-resistance 0.1 Ω
FET technology METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss) 190 pF
JESD-30 code R-PDSO-G8
Number of components 1
Number of terminals 8
Operating mode ENHANCEMENT MODE
Maximum operating temperature 150 °C
Package body material PLASTIC/EPOXY
Package shape RECTANGULAR
Package form SMALL OUTLINE
Polarity/channel type P-CHANNEL
Maximum power consumption environment 2.5 W
Certification status Not Qualified
surface mount YES
Terminal form GULL WING
Terminal location DUAL
transistor applications SWITCHING
Transistor component materials SILICON
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