PN201 datasheet, PDF - EEWORLD Datasheet

PN201: Description65V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92; CategoryDiscrete semiconductor The transistor; File Size50KB，1 Pages; ManufacturerTexas Instruments; Websitehttp://www.ti.com.cn/

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PN201 Overview

65V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Texas Instruments
package instruction	CYLINDRICAL, O-PBCY-T3
Reach Compliance Code	unknown
Collector-based maximum capacity	6 pF
Collector-emitter maximum voltage	65 V
Configuration	SINGLE
Minimum DC current gain (hFE)	50
JEDEC-95 code	TO-92
JESD-30 code	O-PBCY-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	100 MHz
VCEsat-Max	0.4 V

	PN201	MMBT201
Description	65V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92	65V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
Is it Rohs certified?	incompatible	incompatible
package instruction	CYLINDRICAL, O-PBCY-T3	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	unknown	unknown
Collector-based maximum capacity	6 pF	6 pF
Collector-emitter maximum voltage	65 V	65 V
Configuration	SINGLE	SINGLE
Minimum DC current gain (hFE)	50	50
JEDEC-95 code	TO-92	TO-236AB
JESD-30 code	O-PBCY-T3	R-PDSO-G3
JESD-609 code	e0	e0
Number of components	1	1
Number of terminals	3	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	RECTANGULAR
Package form	CYLINDRICAL	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	PNP	PNP
Certification status	Not Qualified	Not Qualified
surface mount	NO	YES
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE	GULL WING
Terminal location	BOTTOM	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED
transistor applications	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	100 MHz	100 MHz
VCEsat-Max	0.4 V	0.4 V

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