PTB20111 datasheet, PDF - EEWORLD Datasheet

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PTB20111: DescriptionRF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, FM-2; CategoryDiscrete semiconductor The transistor; File Size35KB，1 Pages; ManufacturerAdvanced Semiconductor, Inc.

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PTB20111 Overview

RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, FM-2

PTB20111 Parametric

Parameter Name	Attribute value
Maker	Advanced Semiconductor, Inc.
package instruction	FLANGE MOUNT, R-CDFM-F2
Contacts	2
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	EMITTER
Maximum collector current (IC)	20 A
Collector-emitter maximum voltage	25 V
Configuration	SINGLE
Minimum DC current gain (hFE)	20
highest frequency band	ULTRA HIGH FREQUENCY BAND
JESD-30 code	R-CDFM-F2
Number of components	1
Number of terminals	2
Maximum operating temperature	150 °C
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	NPN
Maximum power dissipation(Abs)	159 W
Certification status	Not Qualified
surface mount	YES
Terminal form	FLAT
Terminal location	DUAL
transistor applications	AMPLIFIER
Transistor component materials	SILICON

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PTB20111

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:

The

ASI PTB20111

is Designed for

General Purpose Class AB Power

Amplifier Applications up to 900 MHz.

PACKAGE STYLE .400 2L FLG

FEATURES:

•

25 W, 860-900 MHz

•

Silicon Nitride Passivated

•

Omnigold™

Metalization System

MAXIMUM RATINGS

CBO

DISS

STG

20 A

65 V

159 W @ T

= 25 °C

-40 °C to +150 °C

1.1 °C/W

1 = COLLECTOR

2 = EMITTER

3 = BASE

CHARACTERISTICS

SYMBOL

CEO

CES

EBO

= 25 °C

NONETEST

CONDITIONS

= 100 mA

= 5.0 mA

= 5.0 V

= 25 V

= 200 mA

= 25 V

= 200 mA

= 1.0 A

OUT

= 85 W

OUT

= 60 W

f = 900 MHz

MINIMUM TYPICAL MAXIMUM

3.5

8.5

9.5

10:1

100

UNITS

---

A D V A N C E D S E M I C O N D U C T O R, I N C.

7525 ETHEL AVENUE

•

NORTH HOLLYWOOD, CA 91605

•

(818) 982-1200

•

FAX (818) 765-3004

Specifications are subject to change without notice.

REV. A

1/1

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