TIP 31 series (TIP31/31A/31B/31C)
TIP31/31A/31B/31C
Medium Power Linear Switching Applications
- Complement to TIP32/32A/32B/32C
Absolute Maximum Ratings
CHARACTERISTICS
Collector-Base Voltage
: TIP31
: TIP31A
: TIP31B
: TIP31C
T
a
=25℃ unless otherwise noted
SYMBOL
V
CBO
RATING
40
60
80
100
40
60
80
100
5
3
5
1
2
40
150
-65~150
UNIT
V
V
V
V
V
V
V
V
V
A
A
A
W
W
℃
℃
PNP Epitaxial
Silicon Darlington
Transistor
TO-220
1. Base
2. Collector
3. Emitter
Collector-Emitter Voltage : TIP31
: TIP31A
: TIP31B
: TIP31C
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulse)
Base Current
Collector Dissipation(Ta=25℃)
Collector Dissipation(Tc=25℃)
Junction Temperature
Storage Temperature
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
P
C
T
J
T
STG
12
3
Electrical Characteristics
CHARACTERISTICS
Collector-Emitter Sustaining Voltage
: TIP31
: TIP31A
: TIP31B
: TIP31C
Collector Cut-off Current
: TIP31/31A
: TIP31B/31C
Collector Cut-off Current
: TIP31
: TIP31A
: TIP31B
: TIP31C
Emitter Cut-off Current
*DC Current Gain
*Collector-Emitter Saturation Voltage
*Base-Emitter ON Voltage
Output Capacitance
T
a
=25℃ unless otherwise noted
SYMBOL
V
CEO
(SUS)
I
C
=30mA, I
B
=0
40
60
80
100
0.3
0.3
200
200
200
200
1
25
10
50
1.2
1.8
3.0
V
V
㎒
V
V
V
V
㎃
㎃
㎂
㎂
㎂
㎂
㎃
Test Condition
Min
Max
Unit
I
CEO
I
CES
V
CE
=30V,I
B
=0
V
CE
=60V,I
B
=0
V
CE
=40V,V
EB
=0
V
CE
=60V,V
EB
=0
V
CE
=80V,V
EB
=0
V
CE
=100V,V
EB
=0
I
EBO
h
FE
V
CE
(sat)
V
BE
(on)
f
T
V
EB
=5V,I
C
=0
V
CE
=4V,I
C
=1A
V
CE
=4V,I
C
=3A
I
C
=3A,I
B
=375mA
V
CE
=4V,I
C
=3A
V
CE
=10V,I
C
=500mA,f=1㎒
* Pulse Test: PW≤300us, Duty Cycle≤2%
◎
SEMIHOW REV.A0,Oct 2007