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PHP8N50

Description
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
CategoryDiscrete semiconductor    The transistor   
File Size53KB,7 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Download Datasheet Parametric View All

PHP8N50 Overview

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

PHP8N50 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerPhilips Semiconductors (NXP Semiconductors N.V.)
package instruction,
Reach Compliance Codeunknown
ConfigurationSingle
Maximum drain current (Abs) (ID)8.7 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-609 codee0
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)147 W
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Philips Semiconductors
Product specification
PowerMOS transistor
PHP8N50
GENERAL DESCRIPTION
N-channel enhancement mode
field-effect power transistor in a
plastic envelope featuring high
avalanche energy capability, stable
off-state
characteristics,
fast
switching and high thermal cycling
performance with low thermal
resistance. Intended for use in
Switched Mode Power Supplies
(SMPS), motor control circuits and
general
purpose
switching
applications.
QUICK REFERENCE DATA
SYMBOL
V
DS
I
D
P
tot
R
DS(ON)
PARAMETER
Drain-source voltage
Drain current (DC)
Total power dissipation
Drain-source on-state resistance
MAX.
500
8.8
147
0.8
UNIT
V
A
W
PINNING - TO220AB
PIN
1
2
3
tab
gate
drain
source
drain
DESCRIPTION
PIN CONFIGURATION
tab
SYMBOL
d
g
1 23
s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
I
D
I
DM
P
D
∆P
D
/∆T
mb
V
GS
E
AS
I
AS
T
j
, T
stg
Continuous drain current
Pulsed drain current
Total dissipation
Linear derating factor
Gate-source voltage
Single pulse avalanche
energy
Peak avalanche current
Operating junction and
storage temperature range
CONDITIONS
T
mb
= 25 ˚C; V
GS
= 10 V
T
mb
= 100 ˚C; V
GS
= 10 V
T
mb
= 25 ˚C
T
mb
= 25 ˚C
T
mb
> 25 ˚C
V
DD
50 V; starting T
j
= 25˚C; R
GS
= 50
Ω;
V
GS
= 10 V
V
DD
50 V; starting T
j
= 25˚C; R
GS
= 50
Ω;
V
GS
= 10 V
MIN.
-
-
-
-
-
-
-
-
- 55
MAX.
8.7
5.5
35
147
1.176
±
30
510
8
150
UNIT
A
A
A
W
W/K
V
mJ
A
˚C
THERMAL RESISTANCES
SYMBOL
R
th j-mb
R
th j-a
PARAMETER
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
CONDITIONS
MIN.
-
-
TYP.
-
60
MAX.
0.85
-
UNIT
K/W
K/W
February 1997
1
Rev 1.000
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