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PTB20081

Description
RF Power Bipolar Transistor, 2-Element, Ultra High Frequency Band, Silicon, NPN
CategoryDiscrete semiconductor    The transistor   
File Size90KB,3 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
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PTB20081 Overview

RF Power Bipolar Transistor, 2-Element, Ultra High Frequency Band, Silicon, NPN

PTB20081 Parametric

Parameter NameAttribute value
MakerInfineon
package instructionFLANGE MOUNT, R-CDFM-F4
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresHIGH RELIABILITY
Shell connectionEMITTER
Maximum collector current (IC)12 A
Collector-emitter maximum voltage25 V
ConfigurationCOMMON EMITTER, 2 ELEMENTS
highest frequency bandULTRA HIGH FREQUENCY BAND
JESD-30 codeR-CDFM-F4
JESD-609 codee3
Number of components2
Number of terminals4
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal surfaceMATTE TIN
Terminal formFLAT
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
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