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HER301

Description
3 A, SILICON, RECTIFIER DIODE, DO-201AD
Categorysemiconductor    Discrete semiconductor   
File Size230KB,2 Pages
ManufacturerSY
Websitehttp://www.shunyegroup.com/
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HER301 Overview

3 A, SILICON, RECTIFIER DIODE, DO-201AD

HER301 THRU HER308
HIGH EFFICIENCY RECTIFIERS
Reverse Voltage -
50 to 1000 Volts
DO-201AD
Forward Current -
3.0 Amperes
FEATURES
1.0 (25.4)
MIN.
0.220(5.6)
0.197(5.0)
DIA.
0.375(9.5)
0.285(7.2)
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
High switching for high efficiency
Low reverse leakage
High forward surge current capability
High temperature soldering guaranteed:
250 C/10 seconds,0.375
(9.5mm) lead length,
5 lbs. (2.3kg) tension
MECHANICAL DATA
1.0 (25.4)
MIN.
0.052(1.3)
0.048(1.2)
DIA.
Dimensions in inches and (millimeters)
Case:
JEDEC DO-201AD molded plastic body
Terminals:
Plated axial leads, solderable per MIL-STD-750,
Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:0.04
ounce, 1.10 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
SYMBOLS
HER
301
HER
302
HER
303
HER HER
304 305
HER
306
HER
307
HER
308
UNITS
VOLTS
VOLTS
VOLTS
Amps
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375”(9.5mm) lead length at T
A
=50 C
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 3.0A
Maximum DC reverse current
T
A
=25 C
at rated DC blocking voltage
T
A
=100 C
Maximum reverse recovery time
(NOTE 1)
Typical junction capacitance (NOTE 2)
Typical thermal resistance (NOTE 3)
Operating junction and storage temperature range
V
RRM
V
RMS
V
DC
I
(AV)
50
35
50
100
70
100
200 300 400
140 210 280
200 300 400
3.0
600
420
600
800
560
800
1000
700
1000
I
FSM
V
F
I
R
t
rr
C
J
R
q
JA
T
J
,
T
STG
50
70.0
1.0
200.0
1.3
5.0
150.0
150.0
1.70
Amps
Volts
u
A
70
50
20.0
-65 to +150
ns
pF
C/W
C
Note:1.Reverse
recovery condition I
F
=0.5A,I
R
=1.0A,Irr=0.25A
2.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
3.Thermal resistance from junction to ambient at 0.375”(9.5mm)lead length,P.C.B. mounted
www.shunyegroup.com

HER301 Related Products

HER301 HER304 HER307 HER308 HER303 HER302 HER305 HER306
Description 3 A, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 300 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 800 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 1000 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 100 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 400 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, SILICON, RECTIFIER DIODE, DO-201AD
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