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KBP10RS207

Description
2 A, SILICON, BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size345KB,2 Pages
ManufacturerSY
Websitehttp://www.shunyegroup.com/
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KBP10RS207 Overview

2 A, SILICON, BRIDGE RECTIFIER DIODE

KBP005 THRU KBP10
RS-2
0.600(15.24)
0.560(14.22)
Reverse V oltage - 50 to 1000 Volts
SILICON BRIDGE RECTIFIERS
AND RS201 THRU RS207
Forward Current - 2.0 Amperes
FEATURES
0.500(12.70)
0.460(11.68)
0.460(11.68)
0.420(10.67)
+
AC
-
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
Ideal for printed circuit boards
Low reverse leakage
High forward surge current capability
High temperature soldering guaranteed:
260 C/10 seconds,0.375
(9.5mm) lead length,
5 lbs. (2.3kg) tension
0.50(12.7)
MIN
0.035(0.9)DIA.
0.028(0.7)TPY.
0.640(16.25)
MIN
MECHANICAL DATA
Case:
Molded plastic body
Terminals:
Plated leads solderable per MIL-STD-750,
Method 2026
Polarity:
Polarity symbols marked on case
Mounting Position:
Any
Weight:0.069
ounce, 1.95 grams
0.105(2.67)
0.085(2.16)
0.160(4.1)
0.140(3.6)
0.200(5.08)
0.180(4.57)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
SYMBOLS
KBP005
RS201
KBP01 KBP02
RS202 RS203
KBP04
RS204
KBP06
RS205
KBP08
RS206
KBP10
RS207
UNITS
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward output rectified current
at T
A
=50 C(Note 2)
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Rating for Fusing(t<8.3ms)
Maximum instantaneous forward voltage drop
per birdge element at 1.0A
Maximum DC reverse current
T
A
=25 C
at rated DC blocking voltage
T
A
=100 C
Typical Junction Capacitance (Note 1)
Typical Thermal Resistance (Note 2)
Operating junction temperature range
storage temperature range
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
I
2
t
V
F
I
R
C
J
R
θ
JA
T
J
T
STG
50
35
50
100
70
100
200
140
200
400
280
400
2.0
50.0
10
1.0
600
420
600
800
560
800
1000
700
1000
VOLTS
VOLTS
VOLTS
Amps
Amps
A
2
s
Volts
µ
A
mA
pF
C/W
C
C
10
0.5
20
28
-60 to +150
-60 to +150
NOTES:
1.Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts.
2.Unit mounted on P.C. board with 0.47” x 0.47”(12x12mm) copper pads,0.375”(9.5mm) lead length.
www.shunyegroup.com

KBP10RS207 Related Products

KBP10RS207 KBP005RS201 KBP01RS202 KBP02RS203 KBP08RS206 KBP005 KBP04RS204 KBP06RS205
Description 2 A, SILICON, BRIDGE RECTIFIER DIODE 2 A, SILICON, BRIDGE RECTIFIER DIODE 2 A, SILICON, BRIDGE RECTIFIER DIODE 2 A, SILICON, BRIDGE RECTIFIER DIODE 2 A, SILICON, BRIDGE RECTIFIER DIODE 2 A, SILICON, BRIDGE RECTIFIER DIODE 2 A, SILICON, BRIDGE RECTIFIER DIODE 2 A, SILICON, BRIDGE RECTIFIER DIODE
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