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R1800F

Description
0.5 A, 1800 V, SILICON, SIGNAL DIODE, DO-41
Categorysemiconductor    Discrete semiconductor   
File Size230KB,2 Pages
ManufacturerSY
Websitehttp://www.shunyegroup.com/
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R1800F Overview

0.5 A, 1800 V, SILICON, SIGNAL DIODE, DO-41

R1200F THRU R2000F
HIGH VOLTAGE FAST RECOVERY RECTIFIER
Reverse Voltage -
1200 to 2000 Volts
DO-41
DO-15
Forward Current -
0.5/0.2 Ampere
FEATURES
1.0 (25.4)
MIN.
0.107 (2.7)
0.080 (2.0)
DIA.
0.140 (3.6)
0.104(2.6)
DIA.
1.0 (25.4)
MIN.
0.205 (5.2)
0.160(4.1)
0.300(7.6)
0.230(5.8)
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
Construction utilizes void-free
molded plastic technique
Low reverse leakage
High forward surge current capability
High temperature soldering guaranteed:
250 C/10 seconds,0.375
(9.5mm) lead length,
5 lbs. (2.3kg) tension
1.0 (25.4)
MIN.
0.034 (0.86)
0.028 (0.71)
DIA.
0.034 (0.86)
0.028 (0.71)
DIA.
1.0 (25.4)
MIN.
MECHANICAL DATA
Case:
JEDEC DO-41/DO-15 molded plastic body
Terminals:
Plated axial leads, solderable per MIL-STD-750,
Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:0.012
ounce, 0.33 grams(DO-41)
0.014 ounce, 0.40 grams(DO-15)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
SYMBOLS
R1200F
R1500F
R1800F
R2000F
UNITS
VOLTS
VOLTS
VOLTS
Amp
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375”(9.5mm) lead length (see fig.1)
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 0.5/0.2 A
Maximum DC reverse current
T
A
=25 C
at rated DC blocking voltage
T
A
=100 C
Maximum reverse recovery time
(NOTE 1)
Typical junction capacitance (NOTE 2)
Typical thermal resistance (NOTE 3)
Operating junction and storage temperature range
V
RRM
V
RMS
V
DC
I
(AV)
1200
840
1200
1500
1050
1500
0.5
1800
1260
1800
2000
1400
2000
0.2
I
FSM
V
F
I
R
t
rr
C
J
R
q
JA
T
J
,
T
STG
2.5
30.0
4.0
5.0
50.0
500
15.0
50.0
-65 to +150
Amps
Volts
u
A
ns
pF
C/W
C
Note:1.Reverse
recovery condition I
F
=0.5A,I
R
=1.0A,Irr=0.25A
2.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
3.Thermal resistance from junction to ambient at 0.375”(9.5mm)lead length,P.C.B. mounted
www.shunyegroup.com

R1800F Related Products

R1800F R1200F R1500F R2000F
Description 0.5 A, 1800 V, SILICON, SIGNAL DIODE, DO-41 0.5 A, 1200 V, SILICON, SIGNAL DIODE, DO-41 0.5 A, SILICON, SIGNAL DIODE, DO-41 0.5 A, 2000 V, SILICON, SIGNAL DIODE, DO-41

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Index Files: 1949  69  1041  2197  2119  40  2  21  45  43 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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